Semiconductor device and manufacturing method thereof
A technology of semiconductors and oxide semiconductors, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, transistors, etc., and can solve problems such as large drive currents
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Embodiment approach 1
[0085] In this embodiment, use Figures 1A to 1C The structure of a thin film transistor will be described.
[0086] Figures 1A to 1C A thin-film transistor having a bottom-gate structure in this embodiment mode is shown. Figure 1A is the cross-sectional view, Figure 1B is the floor plan. Figure 1A is in Figure 1B A cross-sectional view along line A1-A2. also, Figure 1C yes Figure 1A An enlarged view of the oxide semiconductor layer 103 of the .
[0087] Figures 1A to 1C In the shown thin film transistor, a gate electrode layer 101 is disposed on a substrate 100, a gate insulating layer 102 is disposed on the gate electrode layer 101, and a plurality of clusters 106 containing titanium are dispersedly disposed on the gate insulating layer 102, An oxide semiconductor layer 103 is provided on the gate insulating layer 102 and the plurality of clusters 106 containing titanium, and source electrode layers or drain electrode layers 105 a and 105 b are provided on the ...
Embodiment approach 2
[0115] In this embodiment, use Figure 3A to Figure 11 The manufacturing process of the display device including the thin film transistor described in Embodiment Mode 1 will be described. Figure 3A to Figure 5C is the cross-sectional view, Figure 6 to Figure 11 is a planar graph, and Figure 6 to Figure 9 Lines A1-A2 and lines B1-B2 in correspond to Figure 3A to Figure 5C Lines A1-A2, B1-B2 in the sectional view of .
[0116] First, the substrate 100 is prepared. The substrate 100 can be used in addition to an alkali-free glass substrate such as barium borosilicate glass, aluminoborosilicate glass, or aluminosilicate glass produced by a fusion method or a float method (float method), and a ceramic substrate. In addition, a heat-resistant plastic substrate or the like that can withstand the processing temperature in this manufacturing process can also be used. In addition, a substrate in which an insulating film is provided on the surface of a metal substrate such as a ...
Embodiment approach 3
[0178] In this embodiment, refer to Figure 12 A thin film transistor having a different shape from the thin film transistor described in Embodiment Mode 1 will be described.
[0179] Figure 12 A thin-film transistor having a bottom-gate structure in this embodiment mode is shown. exist Figure 12 In the shown thin film transistor, a gate electrode layer 101 is disposed on a substrate 100, a gate insulating layer 102 is disposed on the gate electrode layer 101, and a plurality of clusters 106 containing titanium are dispersedly disposed on the gate insulating layer 102, The oxide semiconductor layer 103 is provided on the gate insulating layer 102 and the plurality of clusters 106 containing titanium, the buffer layers 301a and 301b are provided on the oxide semiconductor layer 103, and the active electrode layer or Drain electrode layers 105a, 105b. In addition, source electrode layer or drain electrode layer 105a, 105b has a three-layer structure composed of first condu...
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Abstract
Description
Claims
Application Information
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