Microwave dielectric ceramic material with ultra-low sintering temperature and method for preparing same

A technology of microwave dielectric ceramics and porcelain materials, which is applied in the field of microwave communication and its manufacturing, can solve the problems of increasing ceramic loss and reducing material willfulness, and achieves the effects of high frequency temperature coefficient, low sintering temperature, simple chemical composition and preparation process

Inactive Publication Date: 2010-08-18
GUILIN UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, both of these methods will introduce low-melting point phases, w...

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] Microwave dielectric ceramic material, its molecular structure expression is: (Li 0.5 Bi 0.5 ) WO 4 .

[0015] The steps are: the analytically pure Li 2 CO 3 、 Bi 2 o 3 and WO 3 Moore Billy 2 CO 3 : Bi 2 o 3 : WO 3 = After 1:1:4 preparation, fully mix and ball mill for 4 hours, dry and sieve at 120°C to 140°C after grinding, press into a block, place in an alumina crucible, and heat at 5°C / min Raise the heating rate to 600°C, keep it warm for 4 hours, then pulverize the burnt block and ball mill it for the second time, take it out and dry it, then granulate it, and then sieve it with a 60-mesh and 120-mesh sieve to obtain the required ceramic material . After the ceramic material is pressed into shape (sheet or column) as required, and then sintered at 650°C to 750°C for 2 hours, a low-temperature sintered LTCC microwave dielectric ceramic material can be obtained. The microwave properties of the material at different sintering temperatures are shown in Ta...

Embodiment 2

[0019] Microwave dielectric ceramic material, its molecular structure expression is: (Li 0.5 SM 0.5 ) WO 4 .

[0020] The steps are: the analytically pure Li 2 CO 3 、Sm 2 o 3 and WO 3 Moore Billy 2 CO 3 :Sm 2 o 3 : WO 3 = After 1:1:4 preparation, fully mix and ball mill for 4 hours, grind and dry, sieve, press into a block, place in an alumina crucible, and raise the temperature to 650°C at a rate of 5°C / min , keep warm for 8 hours, then crush the burnt block, ball mill it for the second time, take it out, dry it and granulate it, and then sieve it with 60-mesh and 120-mesh sieves to obtain the desired ceramic material. After the ceramic material is pressed into shape (sheet or column) as required, and then sintered at 750°C to 850°C, a low-temperature sintered microwave dielectric ceramic material can be obtained. The microwave properties of the material at different sintering temperatures are shown in Table 2.

[0021] Table two: Microwave performance under dif...

Embodiment 3

[0024] Microwave dielectric ceramic material, its molecular structure expression is: (Li 0.5 Bi 0.5 ) MoO 4 .

[0025] The steps are: the analytically pure Li 2 CO 3 、 Bi 2 o 3 and MoO 3 Moore Billy 2 CO 3 : Bi 2 o 3 : MoO 3 = After 1:1:4 preparation, fully mix and ball mill for 4 hours, grind and dry, sieve, press into a block, place in an alumina crucible, and raise the temperature to 500°C at a rate of 5°C / min , keep warm for 8 hours to get the burnt block, then crush the burnt block and ball mill it for the second time, take it out and dry it, then granulate it, and then sieve it with 60-mesh and 120-mesh sieves to obtain the desired ceramic material. After the ceramic material is pressed into shape (sheet or column) as required, and then sintered at 550°C to 625°C, a low-temperature sintered microwave dielectric ceramic material can be obtained. The microwave properties of the material at different sintering temperatures are shown in Table 3.

[0026] Table ...

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PUM

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Abstract

The invention discloses microwave dielectric ceramic material with ultra-low sintering temperature. The microwave dielectric ceramic material has the molecular structure expression of (Li0.5M0.5)NO4, wherein the M is Sm or Bi, and the N is W or Mo. The method for preparing the microwave dielectric ceramic material comprises the following steps: preparing analytically pure Li2CO3, M2O3 and NO3 which are at the molar ratio of 1:1:4; mixing the prepared chemical raw materials; adding alcohol to the mixture; mixing the alcohol and the mixture with the wet grinding process; drying the mixture; sieving the mixture; briquetting the mixture; putting the mixture in an alumina crucible; heating the mixture to 500-650 DEG C at the speed of 5 DEG C per minute; preserving the heat of the mixture for 4-8h to obtain a baked block; grinding the baked block; grinding the baked block into balls for the second time; granulating to obtain the microwave dielectric ceramic material; and sintering the microwave dielectric ceramic material at 550-850 DEG C for 2-4h. The microwave dielectric ceramic material has simple chemical components and preparation process, low natural sintering temperature, high Q*f and low frequency-temperature coefficient. In addition, the microwave dielectric ceramic material has the dielectric constant of 16-40.

Description

technical field [0001] The invention belongs to the field of microwave communication and its manufacture, and in particular relates to an ultra-low temperature sintered microwave dielectric ceramic material and a preparation method thereof. Background technique [0002] With the rapid development of the communication industry, the demand for miniaturized and high-performance microwave devices in various mobile communication devices is increasing, and the research and practical application of microwave dielectric ceramics have also made great progress. In order to meet the miniaturization requirements of mobile communication terminal equipment, the use of low temperature co-fired ceramics (LTCC for short) technology and multilayer structure composite technology to develop chip multilayer microwave devices has become a current research hotspot. The co-firing temperature of low-temperature co-fired ceramics (LTCC) is generally between 800°C and 950°C. Due to the low sintering ...

Claims

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Application Information

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IPC IPC(8): C04B35/495C04B35/622
Inventor 周焕福陈秀丽方亮
Owner GUILIN UNIVERSITY OF TECHNOLOGY
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