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Gallium doped solar silicon wafer and production process thereof

A technology for solar silicon wafers and production processes, applied in the directions of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of solar cell performance degradation, reduction of carrier life and diffusion length, etc., and achieve the effect of uniform resistivity

Inactive Publication Date: 2010-08-18
ZHEJIANG XINNENG PHOTOVOLTAIC TECH CO LTD
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  • Summary
  • Abstract
  • Description
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AI Technical Summary

Problems solved by technology

This defect structure reduces the minority carrier lifetime and diffusion length, degrading the performance of solar cells

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Embodiment 1, the production process of gallium-doped solar silicon wafers, 1. charging: the primary polysilicon of scrap in 50 kilograms of primary polysilicon is placed in the bottom of the quartz crucible and paved, and then the primary polysilicon of a large material is arranged on the top ( Pay attention to stacking as far as possible in the center), and then fill and pave the gap between the large materials with scrap materials; place 0.8 grams of 7N high-purity gallium prepared in advance in the center of the top of the raw materials.

[0021] 2. Melting material: The condition of melting material is that the furnace pressure is stable between 900-1100pa when melting the material, and the high-temperature power is 90-100kw. When it is about to be completely melted, (with a little floating material) reduce the power to 75% of the highest power ;The pot position rises to 50mm away from the guide tube;

[0022] 3. After full melting, the power drops to 100 points hi...

Embodiment 2

[0030] Embodiment 2. The weight ratio of raw materials is: 80 kg of primary polysilicon plus 2 g of 7N high-purity gallium. The production process is as in Example 1.

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PUM

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Abstract

The invention relates to a gallium doped solar silicon wafer which is characterized by comprising the following raw materials by weight: 50-80kg of protogenesis polycrystalline silicon and 0.5-2g of 7N high purity gallium. The invention has the advantages that: firstly, a gallium doped solar silicon single crystal rod produced in the invention has uniform transfers and longitudinal resistivity, and the resistance range can be controlled to be 1-4 ohm cm; secondly, the unevenness of central resistance of the head and the tail of the silicon single crystal rod is less than 25 percent; thirdly, the photoinduced attenuation ratio of the monocrystalline silicon piece is generally less than 1 percent; and fourthly, the average photoelectric conversion efficiency is more than 17.4 percent.

Description

Technical field: [0001] The invention relates to a gallium-doped solar silicon chip and a production process. Background technique [0002] There are certain defects in the existing monocrystalline silicon production of solar energy, such as the oxygen content in the growth process of CZ method. In China, boron-doped P-type Czochralski single crystal is the mainstream product in the silicon rod market, and the presence of oxygen can make the cells made of boron-doped P-type Czochralski single crystal have a low photoelectric conversion rate and produce light-induced attenuation. The main reason is that interstitial oxygen and substitutional boron in the boron-doped P-type Czochralski single crystal form a metastable defect structure (ie boron-oxygen complex). This defect structure reduces the minority carrier lifetime and diffusion length, degrading the performance of solar cells. Contents of the invention [0003] In order to overcome the above-mentioned defects, the pu...

Claims

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Application Information

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IPC IPC(8): C30B29/06C30B15/00H01L31/042H01L31/18
CPCY02E10/50Y02P70/50
Inventor 章竟前李金甫屠勇勇肖冀
Owner ZHEJIANG XINNENG PHOTOVOLTAIC TECH CO LTD
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