Semiconductor module and portable device
A portable device, semiconductor technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc.
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Embodiment approach 1
[0023] figure 1 It is a sectional view showing the structure of the semiconductor module of Embodiment 1. The semiconductor module 10 includes an element mounting substrate 20 and a semiconductor element 30 . In this embodiment, the semiconductor element 30 is connected to the element mounting substrate 20 by wire bonding.
[0024] The element mounting substrate 20 includes an insulating resin layer 40, a wiring layer 50 provided on one main surface (semiconductor element mounting side) of the insulating resin layer 40, a protective layer 52, and the other main surface of the insulating resin layer 40. The wiring layer 60, the protective layer 62, and the solder ball 70.
[0025] Examples of materials constituting the insulating resin layer 40 include melamine dielectrics such as BT resins, liquid crystal polymers, epoxy resins, PPE resins, polyimide resins, fluorine-containing resins, phenolic resins, and polyamide bismaleimide. and other thermosetting resins. From the vi...
Embodiment approach 2
[0057] Figure 6 It is a sectional view showing the structure of the semiconductor module of Embodiment 2. The semiconductor module 10 of the present embodiment has a three-dimensional packaging substrate structure called a package-on-package (PoP) in which a package is mounted on a package.
[0058] In the present embodiment, the semiconductor element 30 is flip-chip connected to the element mounting substrate 20 with the electrode-formed surface facing downward.
[0059] Specifically, the wiring layer 50 includes a substrate electrode 51a for flip-chip connection and a substrate electrode 51b for stack packaging. The surface of the substrate electrode 51 a is covered with a Ni / Au layer 53 , and the element electrode 32 provided on the electrode forming surface of the semiconductor element 30 and the Ni / Au layer 53 are bonded by the solder 36 . The sealing resin 80 is provided near the semiconductor element 30 , and a part of the wiring layer 50 including the substrate elec...
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