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Welded IGBT and solderless diode-based series structure module

A series structure, diode technology, applied in the direction of electrical components, electric solid devices, circuits, etc., can solve problems such as open circuit failure, and achieve the effect of easy implementation, simple principle, and safe work.

Active Publication Date: 2010-09-01
CHINA ELECTRIC POWER RES INST +1
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  • Abstract
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  • Application Information

AI Technical Summary

Problems solved by technology

[0010] The present invention proposes a series structure based on welded insulated gate bipolar power transistor IGBT and crimped diode, which solves the problem of open circuit failure when IGBT is used in series, and points out the practicality of IGBT series application A brand new technological path

Method used

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  • Welded IGBT and solderless diode-based series structure module
  • Welded IGBT and solderless diode-based series structure module
  • Welded IGBT and solderless diode-based series structure module

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Embodiment Construction

[0026] Based on the series structure of welded insulated gate bipolar power transistor IGBT and crimped diode, such as figure 1 , which mainly includes heat sink, crimping diode and soldering IGBT.

[0027] Research and practical applications have shown that for every 10°C increase in the temperature of a single semiconductor component, the reliability of the system will decrease by 50%. Therefore, a good heat dissipation method is required to ensure reliable operation of the device. The radiator is a device that accelerates the heat dissipation of the heating element. Its function is to absorb the heat emitted by the semiconductor device and then dissipate it into the surrounding air to ensure that the temperature of the semiconductor device is normal. The heat sink absorbs heat by contacting the surface of the heating component, and then transfers the heat to a distant place through various methods.

[0028] A power diode can be regarded as a static unidirectional power el...

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Abstract

The invention provides a welded IGBT and solderless diode-based series structure module, which belongs to the field of power electronics semiconductor device application. The module comprises a radiator, a solderless diode and welded insulated gate bipolar transistors (IGBT), wherein a plurality of welded insulated gate bipolar transistors (IGBT) are connected in series, and the solderless diode is pressed between two adjacent welded insulated gate bipolar transistors (IGBT), the welded insulated gate bipolar transistors (IGBT) are connected in series by way that the emitting electrode of the first IGBT module is connected with the collecting electrode of the next IGBT module by a low-induction conductor, and the solderless diode is parallelly connected between the collecting electrode and emitting electrode of the IGBT module for free-wheeling and protection. The welded IGBT and solderless diode based series structure module of the invention has the advantages of well solving the problem that the open circuit fails generated in the series connection application of the IGBT, and providing a new technical path for the practicability of the series connection application of the IGBT.

Description

technical field [0001] The present invention belongs to the application field of power electronic semiconductor devices. More specifically, the present invention relates to the use of a new type of power electronic semiconductor device structure, which is applied to common power electronic converters, such as high-voltage frequency converter equipment, voltage source commutation high-voltage direct current Converter valve equipment for power transmission, etc. In particular, it relates to a series structure module based on welding type insulated gate bipolar power transistor IGBT and crimping type diode. Background technique [0002] The semiconductor power switching device that appeared in the mid-1980s--Insulated Gate Bipolar Power Transistor IGBT (Insulated Gate Biploar Transistor) is a load device, its input control part is a MOSFET, and the output stage is a bipolar junction transistor. It has the advantages of both MOSFET and power transistor: high input impedance, vo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L25/18H01L23/40
CPCH01L2924/0002
Inventor 温家良于坤山荆平
Owner CHINA ELECTRIC POWER RES INST
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