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Wire structure and manufacturing method thereof

A manufacturing method and wire technology, applied in semiconductor/solid-state device manufacturing, nonlinear optics, semiconductor devices, etc., can solve the problems that wires affect the display area of ​​pixels, reduce the aperture ratio and brightness of displays, etc.

Inactive Publication Date: 2010-09-08
华映视讯(吴江)有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, increasing the width of the wire will affect the display area of ​​the entire pixel, thus reducing the aperture ratio and brightness of the display.

Method used

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  • Wire structure and manufacturing method thereof
  • Wire structure and manufacturing method thereof
  • Wire structure and manufacturing method thereof

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Embodiment Construction

[0030] Certain terms are used throughout the specification and following claims to refer to particular components. Those of ordinary skill in the art will appreciate that manufacturers may refer to the same component by different terms. The description and the above claims do not use the difference in name as the way to distinguish the components, but the difference in the function of the components as the basis for the difference. "Includes" mentioned throughout the description and the above claims is an open term, so it should be interpreted as "including but not limited to". In addition, the term "electrical connection" here includes any direct and indirect electrical connection means. Therefore, if it is described in the text that a first device is electrically connected to a second device, it means that the first device can be directly connected to the second device, or indirectly connected to the second device through other devices or connection means, Let me first des...

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Abstract

The invention provides a wire structure and a manufacturing method thereof. The wire structure comprises a substrate, a wire layer, an insulating layer, two contact holes, a heavily-doped semiconductor layer and two transparent electrodes, wherein the heavily-doped semiconductor layer is arranged on the wire layer; the insulating layer is arranged between the heavily-doped semiconductor layer and the wire layer; and the two transparent electrodes are arranged in the two contact holes of the insulating layer, so that the wire layer is electrically connected with the heavily-doped semiconductor layer in parallel. The wire structure can effectively reduce the resistance to enhance the transmission efficiency.

Description

technical field [0001] The present invention provides a wire structure and a manufacturing method thereof, particularly a low-resistance wire structure and a manufacturing method thereof. Background technique [0002] Liquid crystal display (liquid crystal display, LCD) is widely used in various information products due to its thin and light appearance, low power consumption and no radiation pollution, from small portable information products, such as personal digital assistants (PDA), notebook computer (notebook), to various large-size display screens, you can see traces of liquid crystal displays. [0003] A general thin-film transistor liquid crystal display (TFT LCD) includes a transparent substrate on which there are many thin-film transistors arranged in an array, pixel electrodes (pixel electrodes), orthogonal scan lines (scan or gate lines) and signal line (data or signal line), a filter plate (color filter), and the liquid crystal material filled between the transp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/1362H01L21/768H01L23/522H01L21/84
Inventor 刘春福邹元昕
Owner 华映视讯(吴江)有限公司
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