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Gadolinium gallium garnet novel laser crystal codoped with ytterbium-sensitized ions and activated by thulium ions

A technology of gadolinium gallium garnet and laser crystal, which is applied in the field of laser crystal materials, can solve the problems of no research report and less research on laser crystal, etc.

Inactive Publication Date: 2010-09-15
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The focus of current research is mainly on Nd-activated GGG high-power heat-capacity laser crystals. For other activated ion-doped Gd 3 Ga 5 o 12 Laser crystals are less studied, especially for Yb 3+ :Tm 3 +Gd 3 Ga 5 o 12 There are no research reports on the growth, spectrum and laser performance of laser crystals at home and abroad.

Method used

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  • Gadolinium gallium garnet novel laser crystal codoped with ytterbium-sensitized ions and activated by thulium ions
  • Gadolinium gallium garnet novel laser crystal codoped with ytterbium-sensitized ions and activated by thulium ions
  • Gadolinium gallium garnet novel laser crystal codoped with ytterbium-sensitized ions and activated by thulium ions

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Embodiment 1

[0013] Embodiment one: Yb:Tm:Gd 3 Ga 5 o 12 Crystal Growth Preparation

[0014] The instrument used for crystal pulling method growth is DJL-400 intermediate frequency pulling furnace, and the model of intermediate frequency power supply is KGPF25-0.3-2.5. Use Pt / Pt-Rh thermocouple and type 815EPC ohmmeter for temperature control. The crucible used is an iridium crucible of Φ55mm×30mm, and the raw material used is 4N grade Gd 2 o 3 , Ga 2 o 3 、Tm 2 o 3 , Yb 2 o 3 . Prepare raw materials according to the following chemical reaction formula:

[0015] (3-x)Gd 2 o 3 +(5-y)Ga 2 o 3 +xTm 2 o 3 +yYb 2 o 3 →2Gd (3-x) T m x Yb y Ga (5-y) o 12 x=1at%~15at%; y=0.1at%~5at%; Yb 2 o 3The weight is 0.5wt%~3wt% of the total weight of raw materials. Mix the raw materials evenly, press them into flakes, put them into a platinum crucible, put them into a common sintering furnace, slowly raise the temperature to 1080°C at 150°C / h, keep for 48h, repeat this process, and...

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Abstract

The invention relates to the field of laser crystal materials. The crystal material has a chemical formula of Yb:Tm:Gd3Ga5O12, belongs to an isometric system and has the following cell parameters: Z is equal to 8 and Dc is equal to 7.083g / cm<3>. The raw material Yb:Tm:Gd3Ga5O12 is produced from Gd2O3, Ga2O3, Tm2O3 and Yb2O3 of 4N used as raw materials by a high temperature solid-phase reaction; and crystals are grown in a reducing atmosphere by using a pulling method. The material is used for realizing the laser output in the wave band of 1.8-2.1 mu m.

Description

technical field [0001] The invention relates to the field of laser crystal materials. Background technique [0002] The 2μm laser is located near the absorption peak of water (1.93μm), so the penetration depth of the tissue is shallow, and it is safe for the human body. In addition, it can be transmitted by optical fiber, so it has become a good surgical light source in medicine. In addition, 2μm band solid-state lasers also have important research prospects in remote sensing, environmental protection, and optical communications. At the same time, it is also an ideal pumping source for obtaining optical parametric oscillators in the 3-5 μm and 8-12 μm bands. Therefore, since the 1960s, people have focused on how to improve the output power and efficiency of 2μm-band lasers, from materials to devices. In addition, ~2.0μm band lasers also have broad application prospects in industry, agriculture and national economic construction. Once successfully developed, the researched ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/28C30B15/00H01S3/16
Inventor 王燕周涵涂朝阳游振宇李坚富朱昭捷
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI