Polycrystalline silicon thin film based on metal induction

A polysilicon thin film, metal-induced technology, applied in transistors, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of poor performance, complex process, and many residues, so as to eliminate the dislocation problem of the alignment plate and shorten the process time. Effect

Inactive Publication Date: 2010-09-15
GUANGDONG SINODISPLAY TECH
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  • Summary
  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0007] In order to overcome the defects of complex preparation process, many residues and poor performance of the existing polysilicon film, the present invention proposes a polysilicon film based on metal induction

Method used

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  • Polycrystalline silicon thin film based on metal induction
  • Polycrystalline silicon thin film based on metal induction
  • Polycrystalline silicon thin film based on metal induction

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preparation example Construction

[0031] image 3 A flowchart showing a method for preparing a polysilicon thin film according to an embodiment of the present invention. In general, if image 3 As shown, the method includes: depositing a silicon oxide or silicon nitride barrier layer on a glass substrate, and depositing an amorphous silicon film (step 301); forming a layer of silicon oxide or silicon nitride capping layer on the amorphous silicon film , and etch the induction port (step 302) on the cover layer; form a layer of metal induction film on the cover layer, make the metal induction film contact with the amorphous silicon film at the induction port (step 303); carry out the first step Annealing process, polysilicon islands are obtained in the amorphous silicon film below the induction port (step 304); a metal absorption layer is deposited on the metal induction film, and then the second annealing process is performed to form crystallized amorphous with uniform distribution of crystal grains Silicon ...

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Abstract

The invention provides a polycrystalline silicon thin film which comprises a glass substrate, a barrier layer and a polycrystalline silicon layer with continuous crystal domain. The thickness of the polycrystalline silicon layer is 10 to 500 nanometers, crystal grains in the polycrystalline silicon layer are uniformly distributed, and the polycrystalline silicon layer is formed by etching an induction hole on a covering layer of an amorphous silicon thin film, enabling a metal induction thin film to contact the amorphous silicon thin film at the induction hole and carrying out annealing crystallization twice.

Description

technical field [0001] The invention relates to the technical field of polysilicon film preparation, and more specifically, the invention relates to a metal-induced polysilicon film. Background technique [0002] The preparation process of amorphous silicon thin film transistor (TFT) is mature and relatively simple, with high yield and low cost. Most of the existing active matrix displays use amorphous silicon thin film transistors. However, amorphous silicon thin film transistors have low field-effect mobility and poor device stability, making it difficult to meet the requirements of fast-switching color sequential liquid crystal displays, current-driven organic light-emitting diode displays, and integrated displays. The low-temperature polysilicon thin film transistor prepared on the glass substrate and obtained by annealing furnace or laser heating has high mobility and good device stability, and is suitable for the preparation of fast switching, current driving and displ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L21/20
Inventor 黄宇华黄飚彭俊华
Owner GUANGDONG SINODISPLAY TECH
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