Device and method for continuous purification reaction treatment of monocrystalline silicon or polycrystalline silicon produced from silicon ore

Abstract

The present invention relates to a continuous purification reaction treatment device and method for producing monocrystalline silicon or polycrystalline silicon from silicon ore. The device includes: batch feeding chamber; high temperature melting furnace; high temperature shaking furnace; high temperature reduction furnace; long single crystal silicon furnace. The method includes the following steps: a. making silicon powder raw material from silicon ore; b. entering the raw material into a batch feeding chamber; c. entering a high-temperature melting furnace through a first PLC control valve; d. controlling the temperature of the high-temperature melting furnace to reach The silica with the required purity is sent to the high-temperature reduction furnace; e. The high-temperature melting furnace discharges impurities through thermal cracking and gasification; f. The impurity liquid at the bottom of the high-temperature melting furnace flows to the high-temperature shaking furnace, and is removed by vibration magnetization; g. The high-temperature shaking furnace The silicon dioxide that meets the purity requirements is sent to the high-temperature reduction furnace; h. High-purity silicon is obtained by reduction reaction in the high-temperature reduction furnace; i. The silicon in the high-temperature reduction furnace is tempered and heat-treated to produce polysilicon and sent to the long single-crystal silicon furnace; j , Long single crystal silicon furnace to produce single crystal silicon rods.

Description

technical field [0001] The invention relates to a processing method for directly producing monocrystalline silicon or polycrystalline silicon from silicon ore, in particular to a continuous treatment process for controlling the purity of silicon and silicon dioxide to achieve high temperature purification of silicon from silicon ore to produce single crystal silicon or polycrystalline silicon A continuous purification reaction treatment device and method for polysilicon. Background technique [0002] At present, high-purity monocrystalline silicon is all produced by polycrystalline silicon growth, and monocrystalline silicon is produced from silicon dioxide with a purity of 5.9 through reduction treatment to produce polycrystalline silicon. Various reduction methods in the prior art, in order to meet the purity requirements of polycrystalline silicon, from purity 3 The removal of impurities from the 9's silica yields silica with a purity of 5 9's or higher. Silica powder wi...

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Problems solved by technology

[0004] This shows that the above-mentioned existing device and method for producing monocrystalline silicon or polycrystalline silicon from silicon ore obviously still have inconvenience and defects in the structure and use of the method and device, and need to be further improved urgently.

In order to solve the above-mentioned problems, relevant manufacturers have tried their best to find a solution, but no suitable design has been developed for a long time, and there is no suitable device and method for producing monocrystalline silicon or polycrystalline silicon from silicon ore. All the methods and structures can solve the above problems, which is obviously a problem that the related industry is eager to solve

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