High-power fundamental transverse mode flat plate coupling optical waveguide semiconductor laser structure

Abstract

The invention discloses a high-power fundamental transverse mode flat plate coupling optical waveguide semiconductor laser structure which comprises a substrate, a buffer layer, an N-type lower limiting layer, a lower waveguide layer, an active area, an interface layer, a P-type upper limiting layer, an intermediate layer, an electrode contract layer, a double channel, a passivating film layer, a P side electrode and an N side electrode. The substrate is used for the growth of all epitaxial layer materials of the laser on the substrate; the buffer layer is made on the substrate; the N-type lower limiting layer is made on the buffer layer; the lower waveguide layer is made on the N-type lower limiting layer; the active area is made on the lower waveguide layer; the interface layer is made on the active area; the P-type upper limiting layer is made on the interface area; the intermediate layer is made on the P-type limiting layer; the electrode contact layer is made on the intermediate layer; the double channel is etched on the electrode contact layer, the etching depth is kept within the lower waveguide layer, and a ridge-type table top is formed in the middle of the double channel; the passivating film layer is made on the upper surface of the electrode contact layer and the bottom and the two sides of the double channel and the passivating film layer on the ridge-type table top is disconnected; the P side electrode is made on the ridge-type table top and is in contact with the electrode contact layer; and the N side electrode is made under the substrate.

Description

technical field [0001] The invention relates to a high-power fundamental transverse mode semiconductor quantum well laser structure, in particular to a high-power fundamental transverse mode flat-plate coupled optical waveguide semiconductor laser structure. Background technique [0002] With the development of optoelectronic industry, the application of semiconductor laser is more and more extensive. In particular, high-power fundamental transverse mode semiconductor lasers are widely used in optical fiber communication systems, laser medical and health care equipment, and single-mode fiber lasers. Especially for the 980nm semiconductor laser pump source used in the erbium-doped fiber amplifier, it is required to be coupled with a single-mode fiber, and its good beam quality and circular spot are more important for improving the fiber coupling efficiency. It is the hardware basis and key device to realize the function of Erbium-doped fiber amplifier (EDFA) in the optical f...

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Problems solved by technology

However, compared with edge-emitting semiconductor lasers, the material preparation and device fabrication of vertical-cavity surface-emitting semiconductor lasers are difficult and costly, which is not conducive to industrialization

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