Method for preparing longitudinal high-pressure boron diffusion deep groove semiconductor pipe

Abstract

The invention relates to a method for preparing a longitudinal high-pressure boron diffusion deep groove semiconductor pipe. The pipe comprises an N-type doped semiconductor substrate, wherein the substrate is provided with an N-type epitaxial layer; a high-concentration P-type semiconductor region is arranged in the epitaxial layer; an oxidized filler is arranged in the high-concentration P-typesemiconductor region; the top of the epitaxial layer is provided with a P-type semiconductor region; an N-type source region is arranged in the P-type semiconductor region; and the high-concentrationP-type semiconductor region of an apparatus is formed by performing deep groove etching, injecting gaseous boron oxide into a deep groove, reacting the gaseous boron oxide with silicon on a side walland a bottom to prepare boron and silicon dioxide and performing a thermal annealing well pushing process. The preparation method has simple process and low cost; and the apparatus manufactured by using the method has high reliability.

Description

Technical field: [0001] The invention relates to a method for preparing a silicon-made high-voltage power metal oxide semiconductor device, more precisely, a method for preparing a silicon-made vertical high-voltage boron diffusion deep groove metal oxide semiconductor field effect transistor. Background technique: [0002] At present, power devices are more and more widely used in daily life, industrial production and other fields, especially power metal oxide semiconductor field effect transistors, which have more advantages than power bipolar devices. The use of power metal oxide semiconductor tubes in power applications has the following advantages: First, the driving circuit of power metal oxide semiconductor tubes is relatively simple. Bipolar transistors may require as much as 20% of the rated collector current to ensure saturation, while MOS transistors require much less drive current and can often be driven directly by CMOS transistors or collectors. Open-circuit t...

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Problems solved by technology

[0004] Aiming at the problems encountered in the manufacturing method of the structure of the vertical double-diffused metal-oxide-semiconductor field-effect transistor with the PN spacer structure in the drift region made of silicon, the present invention proposes a method for preparing a vertical high-voltage boron-diffused deep groove semiconductor tube, The on-resistance of the semiconductor tube manufactured by this preparation method is greatly improved compared with the traditional power metal oxide semiconductor tube with the same withstand voltage, the process is less difficult, the cost is low, the controllability is high, and the reliability is high.

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