Word line-sharing contactless silicon nitride split gate type flash memory and manufacturing method thereof
A technology of split-gate flash memory and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve problems such as device programming voltage reduction, and achieve device size reduction, small size, and avoidance of over-erasing. the effect of removing
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Example Embodiment
[0054] In order to better understand the technical content of the present invention, specific embodiments are given and described below in conjunction with the accompanying drawings.
[0055] The present invention provides a non-contact silicon nitride split-gate flash memory with shared word lines and a manufacturing method thereof. The obtained flash memory device can effectively reduce the area of the chip under the condition that the electrical isolation performance of the chip remains unchanged. At the same time, the problem of over-erasing can be avoided.
[0056] Please refer to figure 1 , figure 1 Shown is a schematic structural diagram of a non-contact silicon nitride split-gate flash memory with shared word lines according to a preferred embodiment of the present invention. The present invention proposes a non-contact silicon nitride split-gate flash memory with shared word lines, comprising: a semiconductor substrate 10 having a source region 11 and a drain regi...
PUM
Property | Measurement | Unit |
---|---|---|
Thickness | aaaaa | aaaaa |
Thickness | aaaaa | aaaaa |
Thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap