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Method for forming metal patterns by stripping

A technology of metal patterning and lift-off method, which is applied in the field of compound semiconductors and can solve the problem of high cost of photoresist materials

Inactive Publication Date: 2010-11-24
CENTURY EPITECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Because this method requires special photoresists, exposure tools with deep ultraviolet wavelengths are required, and the cost of photoresist materials is relatively high

Method used

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  • Method for forming metal patterns by stripping
  • Method for forming metal patterns by stripping
  • Method for forming metal patterns by stripping

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Embodiment Construction

[0025] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0026] Such as Figure 1-9 As shown, it is a schematic diagram of the manufacturing process of the embodiment of the present invention. The embodiment of the present invention relates to a method of manufacturing a fine pattern 5 on a suitable substrate 1 such as a silicon or gallium arsenide wafer using a lift-off (lift-off) process. This embodiment takes forming metal lines as an example, but the method of the present invention is not limited to forming metal lines. The embodiment of the present invention particularly relates to a method of forming a photoresist profile with an undercut structur...

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Abstract

The invention relates to the field of compound semiconductor and provides a method for forming metal patterns by stripping, which comprises: coating positive photoresist on a substrate; softly baking the substrate coated with the photoresist, and fully exposing the softly baked photoresist; performing post-exposure braking of the fully exposed substrate; developing the substrate by using developing solution, and forming an undercut structure of the coated two-layer photoresist; depositing a layer of metallic film on the positive photoresist substrate by physical gas-phase deposition; and dissolving the photoresist by using common photoresist stripping agent, stripping metal from the photoresist and forming a fine pattern on the substrate. In the method, a photoresist section, which has an undercut structure, of the two-layer positive photoresist is formed by a photoetching technique, the subsequently deposited metal is disconnected at the edge of a photoresist pattern, the photoresist is dissolved in solution, metal is stripped, and thus, the metal pattern is fine.

Description

technical field [0001] The invention relates to the field of compound semiconductors, in particular to a method for forming metal patterns on compound semiconductors using a lift-off method. Background technique [0002] In the prior art, using the lift-off (lift-off) method to form metal patterns on the substrate is an important and common technology in the fabrication process of III-V compound semiconductor devices, mainly due to the following reasons: first Typical metals used in this process are generally precious metals such as gold (Au), platinum (Pt), titanium (Ti), nickel (Ni), chromium (Cr), tantalum (Ta) and their compounds, which are difficult to Etching is carried out with common etching methods including wet and dry methods; on the other hand, due to the strong reflection of the surface of the metal, there are many difficulties in forming fine patterns on the surface of the metal; in addition, because the etching of these metals requires Very strong chemicals h...

Claims

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Application Information

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IPC IPC(8): H01L21/768H01L21/78G03F7/00
Inventor 杨坤进杨康陈汝钦
Owner CENTURY EPITECH