Luminous device and electronic device

A technology of light-emitting devices and light-emitting crystal grains, applied in circuits, electrical components, electrical solid devices, etc., can solve the problems of narrow light-emitting band, poor light-emitting intensity of infrared light-emitting diodes, etc., and achieve the effect of high light-emitting intensity

Inactive Publication Date: 2010-12-01
EVERLIGHT ELECTRONICS
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

However, the luminous intensity of infrared light-emitting diodes made in this way is relatively poor, and its luminous wavelength band is relatively narrow.

Method used

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  • Luminous device and electronic device
  • Luminous device and electronic device
  • Luminous device and electronic device

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Embodiment Construction

[0024] Next, the concept of the present invention and its specific implementation will be explained in detail through the embodiments and accompanying drawings. In the drawings or descriptions, components of similar or identical parts use the same symbols. In addition, in the drawings, the shapes or thicknesses of the components of the embodiments may be exaggerated to simplify or facilitate labeling. It is to be understood that components not shown or described may have various forms known to those skilled in the art.

[0025] Hereinafter, the present invention will be described with an embodiment of manufacturing a light emitting device, such as a light emitting diode package. However, it can be understood that the light emitting device in each embodiment of the present invention can be applied to various electronic devices, such as remote control devices, such as video remote controllers or access control controllers, etc. , or an optical sensor (optical sensor) such as a...

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Abstract

The invention provides a luminous device and an electronic device using thesame. The luminous device comprises a luminous crystal grain with a luminous wave band range of 460 nm to 650 nm and a fluorescent powder body, wherein the fluorescent powder body can be excited by light emitted by the luminous crystal grain to emit infrared light with a luminous wave band range of 700 nm to 1200 nm; and the fluorescent powder body is selected from metal copper doped cadmium sulfide, metal copper doped selenium sulfide, metal copper doped cadmium telluride and any combination thereof. The luminous device can effectively emit infrared light with high luminous intensity.

Description

technical field [0001] The invention relates to a light-emitting device, in particular to an infrared light-emitting device with high luminous intensity. Background technique [0002] Currently, light emitting diodes (LEDs) have been widely used in various fields. For example, visible light emitting diodes such as blue light, red light, and green light can be used in lighting and display fields. However, the infrared light-emitting diodes in the invisible light range can be used in fields such as wireless remote control and sensing. [0003] Generally speaking, infrared light-emitting diodes are made by using gallium arsenide (GaAs) as a substrate, and depositing a light-emitting layer of a similar material on the gallium arsenide substrate, such as gallium arsenide or gallium aluminum arsenide (GaAlAs), and directly In this way, the light-emitting diode grain emits infrared light with a light-emitting wavelength range of 850-940 nanometers. However, the luminous intensit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L25/075
CPCH01L2224/48091
Inventor 刘宇桓
Owner EVERLIGHT ELECTRONICS
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