System for manufacturing single crystal ingot
A single crystal ingot and seed crystal technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of low battery conversion efficiency and high battery conversion efficiency
Active Publication Date: 2013-04-03
王敬
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Problems solved by technology
Therefore, the methods and / or systems in the prior art either use the high-cost Czochralski method to prepare silicon monocrystalline ingots to obtain high battery conversion efficiency, or use the low-cost directional solidification method to prepare silicon polycrystalline ingots to obtain batteries The conversion efficiency is also low, unable to strike a balance between silicon monocrystalline solar cells that provide higher conversion efficiency and lower cost crystal preparation methods
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[0036] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.
[0037] The present invention relates to systems and methods for growing single crystal materials. Although the fabrication of single crystal silicon is discussed in the description below, the techniques and methods described herein are not limited to single crystal silicon ingot fabrication systems or methods. Multiple single crystal materials can use the system or method of the present invention to produce multiple single crystal materials (such as Ge, GaAs, etc.), oxides (such as sapphire, YAG, etc.) or fluorides (such as MgF 2 , CaF ...
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The invention discloses a system for manufacturing a single crystal ingot, which comprises an upper furnace body, a lower furnace body, a crucible, at least one heater, a crucible support, a heat insulation part and a temperature control unit, wherein the lower furnace body is matched with the upper furnace body to form a furnace body space; the crucible is arranged in the furnace body space and is used for accommodating seed crystals and feeding; the crucible support is used for supporting the crucible; and the temperature control unit is arranged below the crucible support and is used for controlling the temperature at the position where the crucible accommodates the seed crystals. According to the system, controlled temperature gradient can be formed at the bottom periphery of the crucible, so that the cooling of the seed crystals is controlled in the process of directional solidification, the seed crystals are prevented from being molten completely in the process of forming singlecrystals, and the single crystal ingot is obtained in low cost by utilizing the system.
Description
technical field [0001] The invention relates to a manufacturing process of a single crystal ingot, in particular to a system for manufacturing a single crystal ingot through directional solidification. Background technique [0002] Solar energy is a renewable green energy source. Using the photoelectric conversion properties of semiconductor materials to prepare solar cells can convert solar energy into electrical energy. Since the birth of the first monocrystalline silicon solar cell in 1954, solar cell technology and industry have developed tremendously. Silicon solar cells, especially crystalline silicon solar cells, have high conversion efficiency and low cost and become the most ideal battery species, occupying most of the market share of solar cells. [0003] Crystalline silicon cells are divided into monocrystalline silicon and polycrystalline silicon cells. At present, the conversion efficiency of monocrystalline silicon solar cells is about 2% higher than that of...
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IPC IPC(8): C30B11/00C30B29/06
Inventor 王敬
Owner 王敬