Process for preparing selective emitter solar crystalline silicon solar cell

A solar cell and preparation process technology, applied in the field of solar cells, can solve problems such as high cost, relatively high equipment requirements, complex process, etc., and achieve the effects of good repeatability, high process controllability, and convenience for mass production

Inactive Publication Date: 2010-12-15
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Most of the above-mentioned methods for preparing selective emitter solar cells have been industrialized, but the process is complicated and the requirements for equipment are relatively high, and most of the required equipment requires high-cost development or technology introduction, so the development and introduction of equipment has become a key point

Method used

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  • Process for preparing selective emitter solar crystalline silicon solar cell
  • Process for preparing selective emitter solar crystalline silicon solar cell
  • Process for preparing selective emitter solar crystalline silicon solar cell

Examples

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Embodiment 1

[0040] The preparation process of the selective emitter crystalline silicon solar cell provided in this embodiment includes the following steps:

[0041] (a) Select a silicon wafer, remove the damaged layer, clean it with an acid-base solution, prepare a suede structure on the surface, and coat a layer of amorphous silicon film on the surface of the silicon wafer to be diffused. The amorphous silicon film is intrinsic amorphous silicon Thin film, the thickness of which is 1-1000nm, and the preparation method of amorphous silicon thin film is chemical vapor deposition or physical vapor deposition, etc.;

[0042] The intrinsic amorphous silicon film is used as a semi-barrier layer for diffusion, which cannot completely block the diffusion of the dopant source, but will effectively reduce the doping depth and doping amount entering the crystalline silicon; in the process of selective diffusion, due to the The blocking of the amorphous silicon film can simultaneously achieve high ...

Embodiment 2

[0052] The preparation process of the selective emitter crystalline silicon solar cell provided in this embodiment includes the following steps:

[0053](a) Select a silicon wafer, remove the damaged layer, clean it with an acid-base solution, prepare a suede structure on the surface, and coat a layer of amorphous silicon film on the surface of the silicon wafer to be diffused. The amorphous silicon film is intrinsic amorphous silicon Thin film, the thickness of which is 1-1000nm, and the preparation method of amorphous silicon thin film is chemical vapor deposition or physical vapor deposition, etc.;

[0054] The intrinsic amorphous silicon film is used as a semi-barrier layer for diffusion, which cannot completely block the diffusion of the dopant source, but will effectively reduce the doping depth and doping amount entering the crystalline silicon; in the process of selective diffusion, due to the The blocking of the amorphous silicon film can simultaneously achieve high a...

Embodiment 3

[0064] The preparation process of the selective emitter crystalline silicon solar cell provided in this embodiment includes the following steps:

[0065] (a) Select a silicon wafer, remove the damaged layer, clean it with an acid-base solution, prepare a suede structure on the surface, and coat a layer of amorphous silicon film on the surface of the silicon wafer to be diffused. The amorphous silicon film is intrinsic amorphous silicon Thin film, the thickness of which is 1-1000nm, and the preparation method of amorphous silicon thin film is chemical vapor deposition or physical vapor deposition, etc.;

[0066] The intrinsic amorphous silicon film is used as a semi-barrier layer for diffusion, which cannot completely block the diffusion of the dopant source, but will effectively reduce the doping depth and doping amount entering the crystalline silicon; in the process of selective diffusion, due to the The blocking of the amorphous silicon film can simultaneously achieve high ...

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Abstract

The invention discloses a process for preparing a selective emitter solar crystalline silicon solar cell, which comprises the following steps of: selecting a silicon wafer, plating a layer of amorphous silicon film serving as a diffused semi-blocking layer on a diffusing surface, making a mask complementary with a front electrode on the amorphous silicon film, corroding the amorphous silicon film not covered by the mask by adopting alkali liquor to obtain a front electrode pattern, removing the mask on the amorphous silicon film, performing selective phosphorus diffusion on the silicon wafer under the blocking of the amorphous silicon film to obtain doped layers with different concentrations, and finally performing subsequent treatment to prepare the solar cell. The preparation process is concise and low in cost, is convenient to be compatible with the conventional solar cell equipment without large-scale equipment change, and is suitable for large-scale mass production; and the amorphous silicon film is adopted as the semi-blocking layer of selective diffusion, so the process controllability is high and the repeatability is high.

Description

technical field [0001] The invention belongs to the field of solar cells, and in particular relates to a preparation process of a selective emitter crystalline silicon solar cell. Background technique [0002] Conventional solar cells produced on a large scale are difficult to break through the stable efficiency of 18%. Therefore, research work on improving the efficiency of crystalline silicon solar cells has been widely carried out at home and abroad. Among them, selective emitter is an effective way. [0003] At present, there are many preparation processes for selective emitter solar cells. The preparation method of the emitter can be roughly divided into two-step diffusion method and one-step diffusion method. For example, Nanjing Zhongdian (Patent Publication No. CN 10110193A) first adopts low-concentration diffusion, then thermally grows a silicon dioxide layer, etches electrode patterns on the silicon dioxide layer, and then uses heavy doping to form high and low d...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/20
CPCY02P70/50
Inventor 沈辉陈达明林杨欢梁宗存曾飞
Owner SUN YAT SEN UNIV
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