Unlock instant, AI-driven research and patent intelligence for your innovation.

Nano-imprint resist and nano-imprint method adopting same

A nano-imprinting and resist technology is applied in the nano-imprinting resist and the nano-imprinting field using the nano-imprinting resist, which can solve the complicated pretreatment process and increase the complexity of the ultraviolet nano-imprinting process. and other problems, to achieve the effect of small deformation, low cost and simple process

Active Publication Date: 2010-12-22
TSINGHUA UNIV +1
View PDF0 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The pretreatment process of this template is complicated, which increases the process complexity and cost of UV nanoimprinting

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Nano-imprint resist and nano-imprint method adopting same
  • Nano-imprint resist and nano-imprint method adopting same
  • Nano-imprint resist and nano-imprint method adopting same

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0028] The present invention further provides a method for nanoimprinting, please refer to figure 1 and figure 2 , the first embodiment of the method of nanoimprinting includes the following steps:

[0029] In step 1, a substrate 10 is provided, and a first sacrificial layer 110 , a second sacrificial layer 120 and an imprint resist layer 130 are formed on one surface of the substrate 10 .

[0030] Step one specifically includes the following steps:

[0031] First, a substrate 10 is provided, the substrate 10 is cleaned, and a first sacrificial layer 110 is formed on a surface of the substrate 10 .

[0032] The material of the substrate 10 can be a hard material, such as polished glass, silicon, silicon dioxide or ITO glass, and the material of the substrate 10 can also be a flexible material, such as PS, PMMA or PET. The material of the first sacrificial layer 110 is a polymer, and the polymer is a thermosetting resin such as polymethyl methacrylate, epoxy resin, unsaturate...

no. 2 example

[0064] see image 3 and Figure 4, the second embodiment of the nanoimprint method of the present invention comprises the following steps:

[0065] In step 1, a substrate 30 is provided, and a first sacrificial layer 310 and a second sacrificial layer 320 are sequentially formed on the surface of the substrate 30 .

[0066] In this embodiment, the material of the substrate 30 is completely the same as that of the substrate 10 in the first embodiment, and the manufacturing method, structure, material and positional relationship of the first sacrificial layer 310 and the second sacrificial layer 320 are respectively the same as those in the first embodiment. The manufacturing method, structure, material and positional relationship of the first sacrificial layer 110 and the second sacrificial layer 120 are exactly the same.

[0067] Step 2, providing a template 60 with nanopatterns on the surface, and forming the nanoimprint resist 330 on the surface of the template 60 with nan...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a nano-imprint resist, comprising the following components: hyperbranched oligomers, perfluoropolyether, methyl methacrylate, free radical initiators and organic diluents. The invention also provides a nano-imprint method adopting the nano-imprint resist. The nano-imprint resist has good liquidity and low viscosity and can be polymerized in shorter time, and the graphic formed by polymerization has the advantages of having better demolding property, higher modulus, lower curing shrinkage and being beneficial to demolding. The nano-imprint method is simple in process and low in cost, and the obtained nano graphic has good fidelity and high resolution.

Description

technical field [0001] The invention relates to a resist and a nanoimprint method using the resist, in particular to a nanoimprint resist and a nanoimprint method using the nanoimprint resist. Background technique [0002] In the prior art, when making various semiconductor devices, it is often necessary to make nanopatterns with fine structures ranging from tens of nanometers to hundreds of nanometers. The fabrication method of the nano-pattern with the above-mentioned fine structure mainly includes the lithography method of light or electron beam: first, use radiation or electron beam focused through a mask or scanning to irradiate the photoresist composition or mask, the above-mentioned Radiation or electron beams will change the chemical structure of the resist in the exposed area; then, the resist in the exposed area or outside the exposed area is removed by etching to obtain a specific pattern. [0003] In order to adapt to the rapid development of integrated circuit ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G03F7/00
Inventor 朱振东李群庆张立辉陈墨
Owner TSINGHUA UNIV