Semiconductor device and manufacture method thereof
A manufacturing method and semiconductor technology, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as leakage current increase, damage, crystal structure destruction, etc., to reduce voltage drop, suppress leakage current, and suppress The effect of exothermic
Inactive Publication Date: 2013-01-02
SHINDENGEN ELECTRIC MFG CO LTD
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Problems solved by technology
Therefore, due to the rough surface treatment by sandblasting, the crystal structure of the low-concentration p-type layer 102 is destroyed, and thus the low-concentration p-type layer 102 produces a damaged portion 106, which has a problem of increasing leakage current.
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[0058] Below, use Figure 1 to Figure 8 , the embodiments of the present invention will be described in detail. In addition, this invention is not limited by the relevant embodiment, Various changes are possible within the scope of the technical thought.
[0059] Taking mesa diode 1 as an example, use figure 1 The cross-sectional configuration diagram of , explains a configuration example of a semiconductor device that handles a small current. exist figure 1 In the mesa diode 1 of the present embodiment, the upper n-type semiconductor layer 12 is formed on the lower n-type semiconductor layer 11 .
[0060] The lower n-type semiconductor layer 11 is formed at a high concentration. The concentration of the lower n-type semiconductor layer 11 is, for example, 2×10 19 cm -3 . The thickness of the lower n-type semiconductor layer 11 is, for example, 180 μm.
[0061] The upper n-type semiconductor layer 12 is formed to have a lower impurity concentration than the lower n-t...
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The invention provides a semiconductor device for inhibiting drain current and reducing voltage drop in an area in which micro-current circulates and a manufacture method of the semiconductor device. The manufacture method comprises the following steps of: forming a p-type semiconductor layer near the surface of one side of a n-type semiconductor layer and forming a pn junction, wherein the concentration of the p-type semiconductor layer is set according to that voltage drop is generated in an area in which micro-current circulates; forming an aluminum film on the surface of the p-type semiconductor layer; reacting aluminum with silicon of the p-type semiconductor layer through sintering treatment to generate aluminum-silicide film; removing aluminum which is on the aluminum-silicide filmand is not reacted with silicon through etching to form a tough surface; and forming a nickel film on the rough aluminum-silicide film.
Description
technical field [0001] The present invention relates to a semiconductor device and its manufacturing method. [0002] this application claims priority based on Japanese Patent Application No. 2009-149101 for which it applied to Japan on June 23, 2009, and takes in the content here. Background technique [0003] A known semiconductor device utilizes a low-concentration anode structure to reduce the voltage drop (VF) in a region where a small current flows. Here, a region where a minute current flows means, for example, a region where the current density is 10A / cm 2 Area. In this semiconductor device, an aluminum electrode is used in order to obtain an ohmic contact with a low-concentration anode. However, when nickel electrodes are used, the low-concentration anode structure cannot form ohmic contact with the nickel electrodes. [0004] Therefore, in order to use nickel electrodes, it is proposed as Figure 9 A semiconductor device 100 is shown. exist Figure 9 In this e...
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IPC IPC(8): H01L21/329H01L29/861H01L29/41H01L21/3205H01L21/321
Inventor 小笠原淳神山徹远藤恭介
Owner SHINDENGEN ELECTRIC MFG CO LTD