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Method for preparing high-purity arsenic

A technology of high-purity arsenic and arsenic oxide, applied in the field of preparation of non-metallic materials, can solve the problems of low output, inability to realize industrialization, and high production cost, and achieve the effects of high output, solving pollution problems and safety hazards, and low cost.

Inactive Publication Date: 2011-01-05
SHANXI LONGGANG MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention provides a new method for preparing high-purity arsenic in order to solve the problems of high production cost, low output, and inability to realize industrialization in the existing high-purity arsenic preparation method

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] A method for preparing high-purity arsenic, comprising the following steps: (1) breaking industrial arsenic into pieces <40mm in size, putting it into a crucible, connecting a conical cylinder to the mouth of the crucible, putting it into a vacuum furnace, and covering it Furnace cover, the low boiling matter collector is connected with the furnace cover, evacuate to 40Pa, turn on electricity and heat to 280°C, keep warm for 1 hour, then raise the temperature to 490°C, keep warm for 2 hours, turn off the power after the heat preservation is completed, and wait for the temperature in the furnace to drop When the temperature reaches 40°C, open the furnace cover through the atmosphere, and take out the low boilers and metal arsenic respectively; (2) Break the metal arsenic that has been vacuum distilled into pieces of <20mm, put it into the oxidation furnace, pass oxygen, and heat to 150 ℃ reaction to generate arsenic oxide; (3) Put the arsenic oxide into the crucible, carr...

Embodiment 2

[0018]A method for preparing high-purity arsenic, comprising the following steps: (1) breaking industrial arsenic into pieces <40mm in size, putting it into a crucible, connecting a conical cylinder to the mouth of the crucible, putting it into a vacuum furnace, and covering it Furnace cover, the low boiling matter collector is connected with the furnace cover, evacuated to 300Pa, energized and heated to 310°C, kept for 1 hour, then raised to 520°C, kept for 2 hours, after the heat preservation, turn off the power supply, and wait for the temperature in the furnace to drop When the temperature is below 20°C, open the furnace cover through the atmosphere, and take out the low boilers and metal arsenic respectively; (2) Break the metal arsenic that has been vacuum distilled into pieces of <20mm, put it into the oxidation furnace, pass oxygen, and heat up to Reaction at 300°C to generate arsenic oxide; (3) Put the arsenic oxide into the crucible, carry out two distillations in the...

Embodiment 3

[0020] A method for preparing high-purity arsenic, comprising the following steps: (1) breaking industrial arsenic into pieces <40mm in size, putting it into a crucible, connecting a conical cylinder to the mouth of the crucible, putting it into a vacuum furnace, and covering it Furnace cover, the low boiling matter collector is connected with the furnace cover, evacuate to 40Pa, turn on electricity and heat to 310°C, keep warm for 1 hour, then raise the temperature to 520°C, keep warm for 2 hours, turn off the power after the heat preservation is completed, and wait for the temperature in the furnace to drop When the temperature reaches 40°C, open the furnace cover through the atmosphere, and take out the low boilers and metal arsenic respectively; (2) Break the metal arsenic that has been vacuum distilled into pieces of <20mm, put it into the oxidation furnace, pass oxygen, and heat to 150 ℃ reaction to generate arsenic oxide; (3) Put the arsenic oxide into the crucible, carr...

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Abstract

The invention relates to a method for preparing a nonmetallic material, in particular to a method for preparing high-purity arsenic, solving the problems of high production cost, low output, impossible realization of industrialization, and the like of the traditional preparation methods. The method comprises the following steps of: loading industrial arsenic into a crucible and carrying out primary sublimation and distillation in a vacuum furnace; then loading the arsenic into an oxidation furnace, and introducing oxygen into the oxidation furnace to generate arsenic oxide; loading the arsenic oxide into a crucible and carrying out secondary sublimation and distillation in the vacuum furnace; loading the arsenic oxide subjected to twice distillation into a tube furnace, introducing high-purity argon and hydrogen into the tube furnace for reducing to obtain crystallized arsenic; loading uncrystallized black arsenic and unreduced arsenic oxide into a quartz tube, putting into the vacuum furnace for separating, and reducing obtained arsenic oxide; and finally, loading separated black arsenic and all reduced crystallized arsenic into the tube furnace together, introducing high-purity argon and hydrogen into the tube furnace for carrying out hydrogen sublimation protection to obtain 6N high-purity arsenic. The method has the advantages of simple impurity removal process, low cost and high output, solves the problem of pollution, eliminates potential safety hazards and achieves the purposes of generating the high-purity arsenic without pollution.

Description

technical field [0001] The invention relates to a method for preparing non-metallic materials, in particular to a method for preparing high-purity arsenic. Background technique [0002] As a third-generation semiconductor material, high-purity arsenic, with its superior physical and chemical properties, breaks through the limited information capacity, limited computing speed, and high energy consumption of silicon materials through doping in silicon materials and synthesizing gallium arsenide. Large, large capacity requires large volume, unsatisfactory brightness and color, etc., have been widely used in information, communication, optoelectronic large-scale integrated circuits, high-definition, high-gloss large-screen displays, remote sensing, detection, automatic control of infrared, intelligent chemical, vulcanized optical fiber, synthetic light materials, medicine, medical equipment, aerospace equipment, aerospace, military equipment and other industrial fields, and is p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22B30/04
Inventor 郭创立贾立炳
Owner SHANXI LONGGANG MATERIAL
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