Metal wiring method

Abstract

The invention discloses a metal wiring method. The metal wiring method comprises the following steps of: forming a silicon carbonitride layer on a semiconductor substrate, wherein the thickness of the silicon carbonitride layer is between 425 and 475 angstroms; forming a low-dielectric constant medium layer and a silicon oxide protection layer in turn on the silicon carbonitride layer; forming a patterned photoresist layer on the silicon oxide protection layer and defining a through hole pattern; performing a first etching on the silicon oxide protection layer, the low-dielectric constant medium layer and the silicon carbonitride layer along the through hole pattern by using the patterned photoresist layer as a mask, wherein the first etching gases are Ar, O2, N2 and C4F8; performing a second etching on the silicon oxide protection layer, the low-dielectric constant medium layer and the silicon carbonitride layer along the through hole pattern by using the patterned photoresist layer as a mask so as to form a metal wiring through hole, wherein the second etching gases are Ar, N2 and C4F8; and performing successive metal wiring process. The method can well control the etching of the silicon carbonitride layer to predetermined thickness without penetration and effectively prevent leakage current in a device.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for manufacturing metal wiring. Background technique [0002] Generally, the semiconductor process is to use deposition process, photolithography process, etching process, etc. to form integrated circuit devices on silicon wafers. In order to connect various components to form an integrated circuit, a relatively high-conductivity metal material such as copper is usually used for wiring, that is, metal wiring. The structures used to connect the active regions of semiconductor devices to other integrated circuits are generally plug structures. The process of forming a plug is a process of filling a through hole or a trench with a metal material, for example, the method of forming a plug structure provided by the Chinese patent application document with application number CN98118290. [0003] In the post-production process of semiconductor devices, the...

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Problems solved by technology

Therefore, the silicon carbonitride layer is easily scratched through, resulting in leakage current in the device, which in turn affects the electrical performance of the device

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