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Preparation method of thin-film solar cell absorption layer with gradient gallium-indium atomic ratio distribution

A solar cell and gradient distribution technology, applied in the field of solar power generation, can solve the problems of difficult control of the evaporation process, difficulty in large-area uniformity and continuous production, and strict equipment requirements, so as to achieve large-area uniformity and continuity. The effect of production, improving conversion efficiency and simple equipment

Inactive Publication Date: 2011-01-05
ZHEJIANG SHANGYUE OPTOELECTRONICS TECH
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AI Technical Summary

Problems solved by technology

The co-evaporation method is characterized by good film quality, easy to achieve gradient distribution of elements, and high cell conversion efficiency. However, this method has strict requirements on equipment, and the evaporation process is not easy to control. Large-area uniformity and continuous production are very difficult.

Method used

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  • Preparation method of thin-film solar cell absorption layer with gradient gallium-indium atomic ratio distribution
  • Preparation method of thin-film solar cell absorption layer with gradient gallium-indium atomic ratio distribution
  • Preparation method of thin-film solar cell absorption layer with gradient gallium-indium atomic ratio distribution

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Embodiment Construction

[0020] The present invention will be further described below in conjunction with the accompanying drawings and embodiments, but not as a basis for limiting the present invention.

[0021] Example.

[0022] The copper indium gallium selenium solar cell is followed by the substrate 6, the back electrode layer 5 (Mo), the absorber layer 4 (CIGS), the buffer layer 3 (ZnS or CdS), the transparent conductive film layer 2 and the transparent window layer 1 and the reverse electrode from the bottom to the top. Reflective layer 7 (MnF 2 ). Such as figure 1 shown.

[0023] Preparation method of thin film solar cell absorber layer with gallium indium atomic ratio gradient distribution: using copper indium gallium selenide nanoparticles containing different gallium indium content ratios, using a simple multi-layer jet printing method to prepare thin film solar cell copper indium gallium selenide absorber layer . Specific steps are as follows:

[0024] a. Prepare water-soluble precur...

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Abstract

The invention discloses a preparation method of a thin-film solar cell absorption layer with gradient gallium-indium atomic ratio distribution. The preparation method is characterized in that a thin-film solar cell CIGS (Copper Indium Gallium Selenium) absorption layer is prepared from CIGS nano particles containing different gallium-indium content ratios by a simple multilayer spraying method. By using the CIGS nano particles containing different gallium-indium content ratios and utilizing the simple multilayer spraying method to prepare the thin-film solar cell CIGS absorption layer, the invention realizes the gradient distribution of the gallium-indium atomic ratios in the solar cell CIGS absorption layer so as to improve the conversion efficiency of the solar cell; in addition, the preparation method has the advantages of simple process and needed equipment and can easily realize large-area evenness and continuous production.

Description

technical field [0001] The invention relates to a method for preparing an absorbing layer of a thin-film solar cell, in particular to a method for preparing an absorbing layer of a copper indium gallium selenium solar cell with a gradient distribution of gallium-indium atomic ratios, and belongs to the technical field of solar power generation. Background technique [0002] The CuInGaSe absorber layer in solar cells is usually CuIn 1-x Ga x Se 2 (CIGS) to express. Adjusting the atomic ratio x of gallium indium can be used to adjust the size of the energy gap of the absorbing layer. For example, CuInSe 2 The energy gap is 1.02eV, CuGaSe 2 The energy gap of the solar energy material is 1.68eV, and the ideal solar energy material energy gap range should be between 1.3-1.5eV, and the corresponding gallium-indium atomic ratio x is 0.7. Considering the propagation of sunlight in the absorbing layer, its incident intensity attenuates with the incident depth, introducing the g...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 不公告发明人
Owner ZHEJIANG SHANGYUE OPTOELECTRONICS TECH
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