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Processes for photolithography

A composition and photoresist technology, applied in the direction of photoengraving process of pattern surface, photoengraving process coating equipment, photosensitive material for opto-mechanical equipment, etc.

Inactive Publication Date: 2011-01-12
ROHM & HAAS ELECTRONICS MATERIALS LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Currently used photoresists are suitable for a variety of applications, and current resists also have significant disadvantages, especially for high performance applications such as high resolution sub-quater, or even sub-tenth Formation of Micron Functional Components

Method used

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  • Processes for photolithography
  • Processes for photolithography
  • Processes for photolithography

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0070] Particles (including organic particles) used as substantially immiscible materials include Si-containing and fluorinated materials having carboxyl groups. These particles are commercially available, or can be easily synthesized, for example, by reacting one or more monomers with a crosslinker and an initiator compound (if necessary). The reactive monomer may have substituents such as fluorine, Si substituents, photoacid labile groups such as photoacid labile esters or acetals, and other basic soluble groups such as alcohols as needed. In Example 1 below, such particles were exemplarily synthesized using a variety of different monomers, and one of the monomers provided a photoacid labile group to the resulting polymer particles.

[0071] The substantially immiscible materials are present in the photoresist composition in relatively small amounts, but are still effective. For example, based on the total weight of the liquid photoresist composition, one or more substantially...

Embodiment 2

[0116] Example 2: Preparation of other carboxylic acid resins

[0117] The following carboxylic acid resin was prepared by the similar procedure of Example 1:

[0118] weight ratio

Embodiment 3

[0119] Example 3: Preparation of heterosubstituted carbocyclic aryl resin

[0120] The preparation of the hydroxynaphthalene terpolymer resin having the following structure is disclosed below:

[0121] x / y / z=65 / 10 / 25

[0122] 1. Reactor: Add 20 g of propylene glycol methyl ether acetate (PGMEA) into a 100 ml flask equipped with a magnetic stir bar, and place the flask in a 85°C hot bath while stirring and refluxing for condensation. Purge the reactor with dry nitrogen.

[0123] 2. Monomer / initiator solution: weigh 6.5g of 4,4,4-trifluoro-3-hydroxy-1-methyl-3-(trifluoromethyl)butyl-2-methacrylate, Add 1.0 g of hydroxyvinyl naphthalene, and 2.5 g of 2,3,3-trimethacrylate to a suitable container. Then 10.0 g PGMEA was added to the container. Shake the container to dissolve all the monomers, then place it in an ice bath to cool the monomer solution to 0°C. Then add 0.3 g of tert-butyl peroxyneodecanoate (triganox 23 initiator from Noury ​​Chemicals) to the monomer container bottle, a...

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Abstract

New lithographic processing methods are provided which are particularly useful in immersion lithography schemes. In one aspect, processes of the invention comprise: applying on a substrate a photoresist composition; exposing the photoresist layer to radiation activating for the photoresist composition; removing a portion but not all of the exposed photoresist layer; and developing the treated photoresist layer to provide a photoresist relief image.

Description

Technical field [0001] The present invention relates to a lithographic method, which is particularly used for immersion lithographic printing. In one aspect, the method of the present invention includes: applying a photoresist composition to a substrate; exposing the photoresist layer to radiation to activate the photoresist composition; removing part but not all of the photoresist composition The exposed photoresist layer; and the processed (for example, partially removed) photoresist layer is developed to obtain a photoresist relief image. Background technique [0002] Photoresist is a light-sensitive film used to transfer an image onto a substrate. A photoresist coating is formed on the substrate, and then the photoresist layer is exposed to an activating radiation source through a photomask. The photomask has areas that are opaque to the activation radiation and other areas that are transparent to the activation radiation. Exposure to activating radiation produces a photo-...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/00G03F7/16G03F7/30G03F7/004
CPCG03F7/11G03F7/2041G03F7/0392G03F7/325G03F7/38H01L21/0274
Inventor D·王G·G·巴克利T·A·埃斯戴尔K·J·斯皮祖科D·康
Owner ROHM & HAAS ELECTRONICS MATERIALS LLC