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40V-BCD (Binary-Coded Decimal) process for LED (Light Emitting Diode) drive chip, LDMOS (Lateral Diffusion Metal Oxide Semiconductor) device and preparation method thereof

A 40V-LDMOS, 40V-BCD technology, used in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of complex process, long development cycle, high BCD process cost, and achieve low-cost effects

Inactive Publication Date: 2011-01-12
WUXI JINGKAI TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] At present, the cost of BCD process is relatively high, the process is relatively complicated, and the development cycle is long. Only a few power semiconductor companies have mastered the core technology of BCD process

Method used

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  • 40V-BCD (Binary-Coded Decimal) process for LED (Light Emitting Diode) drive chip, LDMOS (Lateral Diffusion Metal Oxide Semiconductor) device and preparation method thereof
  • 40V-BCD (Binary-Coded Decimal) process for LED (Light Emitting Diode) drive chip, LDMOS (Lateral Diffusion Metal Oxide Semiconductor) device and preparation method thereof
  • 40V-BCD (Binary-Coded Decimal) process for LED (Light Emitting Diode) drive chip, LDMOS (Lateral Diffusion Metal Oxide Semiconductor) device and preparation method thereof

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Effect test

Embodiment Construction

[0046] like figure 2 Shown, the present invention develops 3V / 5V / 40V-BCD complete technological process as follows:

[0047] a) preparing a P-type substrate silicon wafer;

[0048] b) forming an active region;

[0049] c) Self-alignment to form a high-voltage P-type well HVPW;

[0050] d) Self-alignment to form a high-voltage N-type well HVNW;

[0051] e) Self-aligning the P-Body body region and P-Bury buried layer region of the LDMOS device in the HVNW well;

[0052] f) In the high-voltage P-type well HVPW, a drift region Ndrift region is formed by self-alignment;

[0053] g) Forming a low-voltage P-type well LVPW by self-alignment;

[0054] h) Self-alignment to form a low-voltage N-type well LVNW;

[0055] i) Prepare two thin gate oxides DGO (high voltage thin gate oxide DGO1, low voltage thin gate oxide DGO2);

[0056] j) preparing a polysilicon gate;

[0057] k) forming a polysilicon gate sidewall structure by self-alignment;

[0058] l) Formation of heavily dope...

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Abstract

The invention discloses a 40V-BCD process for a LED drive chip, an LDMOS device and a preparation method thereof. In the invention, a part of low-voltage process of a CMOS (Complementary Metal Oxide Semiconductor) is remained; an autoregistration ion implantation process is adopted to form a low-voltage device of a BCD process platform; then the P-Drift process of a 15V-CMOS device is optimized into a P-Body channel process of the LDMOS device with a novel structure; the autoregistration ion implantation process is utilized to form a P-Bury buried layer capable of sharing the electric field of the channel below P-Body; the length of a compression-resistance drift area of a power device is shortened; and the energy consumption is reduced. The invention can ensure that the BCD scheme tightly combines the basis of the traditional CMOS process and the application of the LED drive chip; and compared with the customized BCD technology, the BCD technology of the invention effectively shortens process flows, reduces the cost and has great feasibility.

Description

technical field [0001] The invention relates to a BCD complete set of technology and high-voltage device preparation realized by mature CMOS technology, which can be widely used as a 40V dc - LED drive application, belonging to the field of LED power semiconductor drive technology. Background technique [0002] Under the trend that countries around the world pay more and more attention to environmental protection issues, LED has been widely recognized as a green and clean light source, especially more suitable for the application of high-power green lighting. At present, the industry recognizes that the service life of high-brightness LEDs is about 50,000 hours. However, due to the limitation of the characteristics of GaN-based materials for LED modules, it is determined that the system design should specifically consider photoelectric efficiency, lumens / watt, color temperature drift, and light intensity at any time. The daily attenuation, as well as the thermal resistance ...

Claims

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Application Information

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IPC IPC(8): H01L21/336H01L21/265H01L29/78
Inventor 黄伟徐湘海王胜万清胡南中
Owner WUXI JINGKAI TECH
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