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Method and apparatus for purifying argon, and method and apparatus for purifying object gas

A refining method and refining device technology, applied in the direction of separation methods, inert gas compounds, chemical instruments and methods, etc., can solve problems such as taking a long time

Inactive Publication Date: 2011-02-02
SUMITOMO SEIKA CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, in the above-mentioned removal process in which the temperature of the adsorbent is raised by heat transfer from a heating gas other than purified argon to the adsorbent, it often takes a long time for the adsorbent to reach a sufficiently high temperature.

Method used

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  • Method and apparatus for purifying argon, and method and apparatus for purifying object gas
  • Method and apparatus for purifying argon, and method and apparatus for purifying object gas

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Embodiment

[0148] use Figure 1 ~ Figure 3 The argon refining device Y shown, from the specified raw material gas G 0 The argon was concentrated and separated. The raw material gas G of this embodiment 0It is used atmospheric gas discharged from a silicon single crystal pulling furnace, and contains argon as a main component. The raw gas G 0 The specifications are documented in Figure 22 in the table.

[0149] In this embodiment, in the storage system 1, the raw material gas G is input to the buffer tank 10 0 , and the gas G is continuously supplied from the buffer tank 10 to the rear stage (pretreatment system 2, PSA system 3) 1 . About Gas G 1 , through the booster blower 12 and the flow control unit 14, the pressure is set to 0.1MPa, and the flow is controlled to 20Nm 3 / h.

[0150] In this embodiment, in the pretreatment system 2, the gas G is treated under the following conditions 1 Pre-processing was carried out. As the catalyst in the pretreatment tank 20A, a platinum...

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Abstract

The invention provides a method and an apparatus for purifying argon, a method and an apparatus for purifying object gas. The method and apparatus for purifying argon are suitable for producing high purity argon at high yield using a TSA method and suitable for shortening the TSA circulation time. In the method for purifying argon, the gas containing Ar is input to a storage groove (10) and then supplied to a TSA absorbing tower (51A, 51B) containing an absorbing tube filled with an absorbent. The absorbing, heating and removing and cooling steps are repeatedly performed in each TSA absorbing tower. In the absorbing step, the absorbent in the absorbing tube is at the relative low temperature for absorbing, the gas is guided into the absorbing tube and the impurity in the gas is absorbed in the absorbent and the Ar rich gas is guided out from the absorbing tube. In the heating and removing step, the liquid type heat carrier makes the temperature of the absorbent in the absorbing tube rise and the impurity in the absorbent is removed and the purified gas is guided into the absorbing tube and the exhaust gas is guided out from the absorbing tube. The exhaust gas is guided into the storage groove (10). In the cooling step, a liquid type refrigerant reduces the temperature of the absorbent in the absorbing tube.

Description

technical field [0001] The present invention relates to a method and a device for purifying argon by using a temperature swing adsorption method, and a method and a device that can be used in the method and device. Background technique [0002] Argon is often used as the furnace atmosphere gas in single crystal silicon crystal pulling furnaces, ceramic sintering furnaces, vacuum degassing furnaces for steelmaking, and silicon plasma melting furnaces for solar cells. The purity of argon used as the atmosphere gas in the furnace decreases due to the contamination of impurities. The argon used as the atmosphere gas in the furnace is recovered for reuse and purified by a temperature swing adsorption method (TSA method: Thermal Swing Adsorption). The technology for purifying argon by the TSA method is described in, for example, Patent Documents 1 and 2 below. [0003] Patent Document 1: (Japanese) Unexamined Patent Publication No. 7-138007 [0004] Patent Document 2: (Japanese...

Claims

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Application Information

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IPC IPC(8): C01B23/00B01D53/047B01D53/053
CPCB01D53/04C01B23/0057
Inventor 春名一生三宅正训坂本纯一中谷光利
Owner SUMITOMO SEIKA CHEM CO LTD
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