Polysilicon channel type wool making and cooling device

Abstract

The invention relates to a polysilicon channel type wool making and cooling device which comprises a wool making channel, a corrosive liquid input pipe, a circulating pump, an inlet temperature sensor, a heat exchanger, a corrosive liquid output pipe, an outlet temperature sensor, a cooling liquid pool, a variable pump, a recovery pool and an electric control component, wherein corrosive liquid in the wool making channel is sucked through the circulating pump and enters a hot liquid branch pipe in the heat exchanger through a corrosive liquid inlet pipe; cooled corrosive liquid flows back to the wool making channel from the corrosive liquid output pipe; the inlet temperature sensor and the outlet temperature sensor are respectively arranged on the corrosive liquid input pipe and the corrosive liquid output pipe; the electric control component is used for controlling the variable pump according to signals of the corrosive liquid input pipe and the corrosive liquid output pipe; and the cooling speed is regulated through changing the flow of the cooling liquid. Because the polysilicon wool making channel is subjected to circulating cooling treatment, the temperature change of the corrosive liquid in the wool making channel can be effectively controlled to ensure that the temperature difference value is controlled within a preset process requirement range, thereby the defects in the prior art are overcome, and the temperature control requirement of a polysilicon wool making process on the corrosive liquid is met.

Description

Technical field: [0001] The patent of the present invention relates to a device for cell production, in particular to a polysilicon tank-type texturing cooling device. Background technique: [0002] With the continuous improvement of solar photovoltaic industry technology, new requirements are put forward for the quality and cost of solar products. Due to the low cost of raw materials, the production of polycrystalline silicon cells has a very large low-cost advantage in the future production of photovoltaic cells, and the cost consumption of its new process is also lower than that of monocrystalline silicon cells. [0003] Due to the non-directionality of polysilicon grains, it is determined that the production process of monocrystalline silicon cannot be used in the cleaning and texturing process, but an isotropic etching solution is used to etch and texturize silicon wafers. At present, Usually HNO 3 The mixed solution of HF and HF is used for polycrystalline texturing....

AI Technical Summary

Problems solved by technology

[0003] Due to the non-directionality of polysilicon grains, it is determined that the production process of monocrystalline silicon cannot be used in the cleaning and texturing process, but an isotropic etching solution is used to etch and texturize silicon wafers. At present, Usually HNO 3 The mixed solution of HF and HF is used for polycrystalline texturing. During the process of corrosion texturing, huge heat will be released, so that the temperature of the reaction solution exceeds the normal process temperature in a short time. This situation is necessary for the corrosion texturing process. Strictly controlled, otherwise it will directly affect the texture making effect, and in severe cases, it will cause the normal continuation of the texture production. This disadvantage is especially obvious in the process of groove type texture

According to the requirements of the texturing process, the temperature difference of the reaction solution should be controlled within 5°C. The existing tank-type texturing process is difficult to meet the above requirements, mainly because the cooling device for corroding the texturing tank cannot meet the requirements, and there is an urgent need for the cooling effect to be able to controlled cooling unit

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