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Active element array substrate and manufacturing method thereof

A technology of active components and array substrates, which is applied in the fields of electrical components, semiconductor/solid-state device manufacturing, and electric solid-state devices. The effect of oxidation rate

Active Publication Date: 2011-02-09
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, when the copper metal is manufactured, copper oxide will be formed on the surface of the copper metal. Since the etching rate of the copper oxide on the copper surface is different from that of copper, it is easy to cause disconnection in the etching manufacturing process.

Method used

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  • Active element array substrate and manufacturing method thereof
  • Active element array substrate and manufacturing method thereof
  • Active element array substrate and manufacturing method thereof

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Experimental program
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Embodiment Construction

[0040] Figure 1A to Figure 1G It is a cross-sectional view of a manufacturing process of an active device array substrate according to an embodiment of the present invention. figure 2 for Figure 1E A cross-sectional view of the patterned conductive layer 122 in another cross-sectional direction, where figure 2 The section direction of Figure 1E The section directions are perpendicular to each other.

[0041] First, please refer to Figure 1A , Provide a substrate 100. The material of the substrate 100 is, for example, a transparent material, an opaque material, a flexible material, or a combination of the foregoing materials.

[0042] Then, a barrier layer 102 can be selectively formed on the substrate 100. The material of the barrier layer 102 is, for example, at least one selected from the group consisting of molybdenum, molybdenum alloy, titanium, titanium alloy, aluminum alloy, and copper alloy. The formation method of the barrier layer 102 is, for example, a physical vapo...

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Abstract

The embodiment of the invention provides an active element array substrate and a manufacturing method thereof. The active element array substrate is provided with at least one patterned conductive layer; the patterned conductive layer comprises a copper layer; the section, parallel to the normal direction of the copper layer, of the copper layer consists of a first trapezoid and a second trapezoid overlapped on the first trapezoid; and the basic angle of the first trapezoid and the basic angle of the second trapezoid are acute angles with angle difference of between 5 and 30 degrees. Through the embodiment of the invention, the active element array substrate can provide good electrical performance and effectively improve the wire break ratio.

Description

Technical field [0001] The present invention relates to an active device array substrate (Active Device Array Substrate), in particular to an active device array substrate with a copper conductive layer and a manufacturing method thereof. Background technique [0002] As the size of thin-film transistor liquid crystal display (TFT-LCD) panels becomes larger and larger, the resistance-capacitance (RC) delay effect caused by the insufficient resistance of the metal wire is accompanied by the distortion of the signal during the transmission process. , And affect the presentation of the panel image quality. Using a single layer of copper with low resistance to form metal wires can effectively reduce the RC delay effect. However, when the copper metal is manufactured, copper oxide will be formed on the surface of the copper metal. Since the copper oxide on the copper surface layer and the copper are etched at a different rate, the problem of disconnection is likely to occur during th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/41H01L21/77H01L21/768H01L23/52
Inventor 陈柏林林致远林瑜旻林俊男
Owner AU OPTRONICS CORP
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