Method for manufacturing lengthwise region of CoolMOS
A manufacturing method and vertical technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as complex process, high processing cost, and long process time, so as to overcome voids, improve process efficiency, and improve process overly complex effects
Active Publication Date: 2011-03-23
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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The invention discloses a method for manufacturing a lengthwise region of a CoolMOS, and the lengthwise region is manufactured by two steps as follows: manufacturing a lengthwise region with a certain height by adopting a primary or repeated epitaxial growth technology and an ion implantation technology; and manufacturing a lengthwise region with the rest height by adopting an epitaxial growth technology, a groove etching technology and an epitaxial depositing and filling technology, thus finally forming a lengthwise region with a complete height. On the basis, polysilicon gate structures can be manufactured, and plasma implantation and ion source implantation are carried out to finally form a CoolMOS device. The method in the invention has high process efficiency, and no holes exist in the lengthwise region.
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