Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor device and method for producing same

A technology for semiconductors and devices, which is applied in the field of manufacturing semiconductor devices, and can solve problems such as reduced output

Inactive Publication Date: 2012-08-08
FUJITSU SEMICON LTD
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, mask material residues lead to reduced yield

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device and method for producing same
  • Semiconductor device and method for producing same
  • Semiconductor device and method for producing same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] Figure 1A The layout of the image pickup apparatus including the semiconductor device according to the first embodiment is shown. A plurality of pixels 13 are arranged in a matrix in the image pickup area 10 . The reset control line RST and the selection control line SEL are arranged corresponding to the rows of the respective pixels 13 . The reset voltage line VR and the signal line SIG are arranged corresponding to the columns of the respective pixels 13 . The row selection circuit 11 sends a reset signal to a reset control line RST, and sends a selection signal to a selection control line SEL. The signal readout circuit (reset voltage applying circuit) 12 applies a reset voltage to the reset voltage line VR, and reads an electrical signal appearing on the signal line SIG.

[0021] Figure 1B is an equivalent circuit diagram of one pixel 13. The anode of the photodiode PD is grounded. The cathode of photodiode PD is reset by transistor T 1 Connect to reset volt...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a semiconductor device and a method for producing same. The semiconductor device includes a semiconductor substrate having at least one surface provided with a semiconductor element, wherein the semiconductor substrate includes a region of a first conductivity type, the region being formed in a surface layer portion of the semiconductor substrate; a first diffusion region of a second conductivity type, the first diffusion region having a first impurity concentration and being formed in the surface layer portion, and a pn junction being formed between the first diffusionregion and the region of the first conductivity type; and a first metal silicide film formed on part of a portion of the surface corresponding to the first diffusion region.

Description

[0001] Cross References to Related Applications [0002] This application is based on a prior Japanese Patent Application No. 2009-178755 filed on July 31, 2009, and claims priority from the above application, the entire contents of which are hereby incorporated by reference into this application. technical field [0003] The present invention relates to a semiconductor device including a photodiode formed on a surface of a substrate and a method for manufacturing the semiconductor device. Background technique [0004] In order to improve the sensitivity of a photodiode, it is desirable to suppress leakage current when a reverse bias voltage is applied to the pn junction of the photodiode. Leakage current acts as a dark current that flows when no light is incident, resulting in reduced sensitivity. In the case where a depletion layer formed when a reverse bias voltage is applied to a photodiode contacts an interface between a semiconductor material such as silicon and an in...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146H01L31/103
CPCH01L27/14603H01L27/14689H01L27/14609H01L27/14623H01L31/103H01L31/10
Inventor 片山雅也
Owner FUJITSU SEMICON LTD