Unlock instant, AI-driven research and patent intelligence for your innovation.

Oxide layer and method for manufacturing grid electrode of flash memory containing same

A technology for an oxide layer and a manufacturing method, which is applied in the field of flash memory manufacturing, can solve the problems of uneven thickness of the oxide layer, low flatness of the oxide layer, etc., and achieves high flatness, superior charge leakage and retention characteristics, and uniform thickness. Effect

Inactive Publication Date: 2011-03-30
SEMICON MFG INT (SHANGHAI) CORP
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] In order to solve a problem in the prior art that the flatness of the oxide layer formed on the nitride layer is low, the present invention solves another technical problem that the film thickness of the oxide layer formed on the nitride layer is uneven The problem

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Oxide layer and method for manufacturing grid electrode of flash memory containing same
  • Oxide layer and method for manufacturing grid electrode of flash memory containing same
  • Oxide layer and method for manufacturing grid electrode of flash memory containing same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be described in detail below in conjunction with specific embodiments and accompanying drawings.

[0035] Figure 3A-Figure 3J Shown is a schematic cross-sectional view of a method for manufacturing a flash memory gate according to an embodiment of the present invention.

[0036] Such as Figure 3A As shown, a shield oxide film 202 , a pad nitride film 204 , and a hard mask oxide film 206 are sequentially formed on a substrate 200 .

[0037] Wherein, the substrate 200 may be silicon; the shielding oxide 202 may be a film with a thickness of 50 angstroms to 80 angstroms formed by wet oxidation or dry oxidation at a temperature of 750 degrees to 800 degrees.

[0038] Wherein, the pad nitride film 204 may be a film with a thickness of 1000 angstroms to 2000 angstroms formed by low pressure chemical vapor deposition.

[0039] Refer to as fig...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method for manufacturing an oxide layer, which comprises the following steps of: providing a nitride layer; performing plasma surface treatment on the nitride layer; and forming the oxide layer by utilizing a process of high aspect ratio. The invention also provides a method for manufacturing a grid electrode of a flash memory. A manufacturing method of a second oxide layer in the flash memory is the same as that of the oxide layer. Oxides manufactured by the method have high flatness and uniform thickness.

Description

technical field [0001] The invention relates to the technical field of flash memory manufacturing, in particular to an oxide layer and a method for manufacturing a gate of flash memory including the oxide layer. Background technique [0002] Flash memory has become an indispensable semiconductor product in people's daily life. It is widely used in consumer electronics products, such as: digital cameras, video cameras, notebook computers, mobile phones, etc. [0003] figure 1 It is an existing gate structure of a flash memory. The gate includes: a substrate 100 , a tunnel oxide film 102 on the substrate 100 , a floating gate 104 , a dielectric film, a control gate 108 and an isolation film 110 . [0004] By applying an appropriate bias voltage on the control gate 108 and the substrate 100 , electrons are injected into or extracted from the floating gate 104 , thereby realizing programming, erasing and reading operations of the flash memory. [0005] The dielectric film ha...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/28H01L21/336H01L21/8247H01L21/263H01L21/268
Inventor 徐建华胡亚威
Owner SEMICON MFG INT (SHANGHAI) CORP