Forming method of dual-damascene structure and semiconductor structure
Patent Information
- Authority / Receiving Office
- CN ยท China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SEMICON MFG INT (SHANGHAI) CORP
- Publication Date
- 2011-03-30
- Estimated Expiration
- Not applicable ยท inactive patent
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Abstract
Description
technical field
[0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a double damascene structure and a semiconductor structure. Background technique
[0002] In recent years, with the improvement of the integration level of semiconductor integrated circuits, the improvement of semiconductor integrated circuit manufacturing equipment and the development of semiconductor process materials, the semiconductor process has been continuously updated.
[0003] In addition to the higher integration and more powerful functions of the prepared semiconductor products, the new semiconductor technology can also reduce the production cost of semiconductor products and improve the competitiveness of semiconductor products.
[0004] In various semiconductor processes of integrated circuits, the formation of photoresist patterns on the surface of thin films is one of the most critical processes in the semiconductor process. The accur...