Bipolar junction transistor and bipolar CMOS (Complementary Metal Oxide Semiconductor) integrated circuit as well as manufacturing method

Abstract

The invention relates to a bipolar junction transistor and a bipolar CMOS (Complementary Metal Oxide Semiconductor) integrated circuit as well as a manufacturing method. The bipolar junction transistor comprises a first doped region, a second doped region, a third doped region in the first doped region, a second isolated layer in the first doped region and the second doped region and a doped polycrystalline silicon layer on the third doped region and the second isolated layer, wherein the first doped region and the second doped region are adjacent to be distributed on a silicon substrate of an insulator; the periphery of the first doped region and the second doped region is surrounded by a first isolated layer; the third doped region is electrically connected with the second doped region;the third doped region is surrounded by the second isolated layer; and the doped polycrystalline silicon layer, the third doped region and the first doped layer are respectively used as an emitter region, a base region and a collector region of the bipolar junction transistor. The bipolar junction transistor can be manufactured on a thin top silicon SOI (Silicon-On-Insulator) substrate so as to realize thin top silicon SOI-BiCMOS (Silicon-On-Insulator-Bipolar Complementary Metal Oxide Semiconductor) process integration.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a bipolar junction transistor (BJT, BipolarJunction Transistor), a bipolar CMOS (BiCMOS) integrated circuit and a manufacturing method. Background technique [0002] BiCMOS integrated circuit is an integrated circuit composed of bipolar gate circuit and CMOS gate circuit. At the same time, it has the characteristics of high density, low power consumption, high speed and large driving capacity. [0003] High-performance BiCMOS integrated circuits were proposed and implemented in the early 1980s. They are mainly used in high-speed static memories, high-speed gate arrays, and other high-speed digital circuits. They can also produce high-performance analog / digital hybrid circuits for system integration. [0004] The manufacturing process of BiCMOS can be mainly divided into two categories: BiCMOS process based on CMOS, and BiCMOS process based on bipolar process. [0005]...

AI Technical Summary

Problems solved by technology

[0007] The invention solves the problem that the formation thickness of bipolar junction transistor and CMOS is relatively different in SOI-BiCMOS technology in the prior art, which is not conducive to the integration of bipolar technology and CMOS technology.

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