Resistance switch material in Ag/Ag2S core/shell nanometer structure and preparation method thereof

A resistance switch and nanostructure technology, applied in the coating and other directions, can solve the problems of weak electronic signal of resistance switch, difficult to achieve industrial amplification, difficult application, etc., to achieve the effect of easy mass production, convenient industrial amplification, and enhanced current signal

Active Publication Date: 2011-04-13
山东建邦集团有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Traditional methods are difficult to achieve this at the nanoscale. Although modern electron beam printing can solve this problem, it also brings practical problems such as complex process, cumbersome manipulation, high cost, and difficult application.
Second, microelectronic integrated circuits require the miniaturization of components, but a single Ag 2 Res

Method used

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  • Resistance switch material in Ag/Ag2S core/shell nanometer structure and preparation method thereof
  • Resistance switch material in Ag/Ag2S core/shell nanometer structure and preparation method thereof
  • Resistance switch material in Ag/Ag2S core/shell nanometer structure and preparation method thereof

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Example Embodiment

[0036] Example 1

[0037] In 50 ml of ethylene glycol, add 10 g of PVP (K30), magnetically stir, heat to 190°C, then add 0.1 g of silver nitrate, keep at 190°C for 5 minutes; then, add 5 mg of sulfur powder to react at 190°C After 10 minutes, the precipitate obtained from the reaction was washed with ethanol and dried at 40~80℃ to obtain Ag / Ag with a particle size of 10~15 nm 2 S core / shell nanocrystals.

Example Embodiment

[0038] Example 2

[0039] In 50 ml of ethylene glycol, add 10 g of PVP (K30), magnetically stir, heat to 180 ℃, then add 0.5 g of silver nitrate, keep at 180 ℃ for 10 minutes; then, add 20 mg of sulfur powder, at 180 ℃ After reacting for 10 minutes, the precipitate obtained from the reaction was washed with ethanol and dispersed in 5 ml of ethanol to obtain Ag / Ag with a particle size of 50-60 nm and a shell thickness of 5-10 nm 2 S core / shell nanocrystalline dispersion colloid;

[0040] Take 50 microliters of colloid, in an area of ​​about 0.5 × 0.5 cm 2 The aluminum sheet is spin-coated into a film, and then two films are used to assemble a resistance switch, and the I-V curve is measured, see Image 6 .

Example Embodiment

[0041] Example 3

[0042] In 50 ml of ethylene glycol, add 10 g of PVP (K30), magnetically stir, heat to 160 ℃, then add 0.5 g of silver nitrate, keep at 160 ℃ for 10 minutes; then, add 10 mg of sulfur powder to react at 160 ℃ For 10 minutes, the precipitate obtained from the reaction was washed with ethanol and dried at 40-80°C to obtain Ag / Ag with a particle size of 60-80 nm and a shell thickness of 2-5 nm. 2 S core / shell nanocrystals.

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Abstract

The invention relates to a resistance switch material in Ag/Ag2S core/shell nanometer structure and a preparation method thereof. The Ag/Ag2S core/shell nanometer structure takes Ag as a core and Ag2S as a shell; the shape is sphere or similar to sphere; the average diameter is 0.01-5.0 microns; and the thickness of the Ag2S shell is 2-100 nanometers. The preparation method comprises the steps of: adding silver nitrate in a glycol/PVP (Polyvinyl Pyrrolidone) system to react; adding sulfur powder to react continuously; and washing the reacted precipitate by ethanol and then drying to obtain Ag/Ag2S core/shell nanocrystalline. The Ag/Ag2S core/shell nanocrystalline provided by the invention can be used as a resistance switch material to construct an Ag2S resistance switch, and has the advantages of simple and convenient preparation, economy, and suitability for industrial amplification and practical application.

Description

technical field [0001] The present invention relates to a kind of Ag / Ag 2 The invention relates to an S core / shell nanostructure resistance switch material and a preparation method thereof, which belong to the field of inorganic non-metallic materials. Background technique [0002] In addition to the three basic circuit elements of resistance, capacitance, and inductance, future electronic integrated circuits will also have a fourth basic circuit element, namely memristor (see Nature 2008, 453, 80), which constitutes the key to memristor The components are resistive switches (see Nat. Mater. 2007, 6, 833). A typical resistive switch includes such a structural unit as M-I-M, where M represents a type of electronic conductor electrode, which can be a metal or non-metallic electronic conductor, and I represents a type of insulator, usually an ion conductor material. Ag 2 The resistive switching effect of S was first discovered by Hirose in 1976 (see J.Appl.Phys.1976, 47, 276...

Claims

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Application Information

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IPC IPC(8): B22F1/02B22F9/24
Inventor 陈代荣陈波焦秀玲
Owner 山东建邦集团有限公司
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