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Optimization method of chemical mechanical polishing process

A technology of chemical machinery and grinding technology, which is applied in the direction of grinding devices, grinding machine tools, manufacturing tools, etc., and can solve problems such as optimization and difficult CMP processes

Inactive Publication Date: 2011-04-20
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0025] However, in practical applications, the composition of the oxide layer may be tetraethyl silicate silicon oxide (TEOS) or high aspect ratio silicon oxide (HARP), and the composition of the oxide in the shallow trench may be TEOS or HARP. When TEOS or HARP is used as the oxide layer or the oxide in the shallow trench, due to the characteristics of TEOS or HARP itself, when TEOS or HARP contacts the metal tungsten formed by the electron beam deposition process, both TEOS and HARP surfaces will produce Shrinkage phenomenon, so that the oxide layer or the oxide in the shallow trench is depressed. In this case, the measured height of the tungsten plug or the depth of the oxide depression in the shallow trench cannot truly reflect the effect of the CMP process. Therefore, it is difficult to optimize the CMP process

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  • Optimization method of chemical mechanical polishing process
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  • Optimization method of chemical mechanical polishing process

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Experimental program
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Embodiment 1

[0055] The CMP process optimization method in the tungsten plug manufacturing process provided by the present invention includes:

[0056] step one, Image 6 For the schematic cross-sectional view of Step 1 of the CMP process optimization method in the tungsten plug manufacturing process provided by the present invention, see Image 6 , to provide an experimental sample, the experimental sample is a wafer filled with metal tungsten in the through hole of the oxide layer. After the metal tungsten is ground to the surface of the oxide layer by CMP process to form a tungsten plug, the PE-CVD process is used on the oxide layer SiN is formed on the surface.

[0057] The principle of PE-CVD is to use low-temperature plasma as the energy source, place the experimental sample on the cathode of the glow discharge under low pressure, use the glow discharge to heat the experimental sample to a predetermined temperature, and then pass in the appropriate reaction gas, gas After a series ...

Embodiment 2

[0069] The CMP process optimization method in the STI process provided by the present invention comprises:

[0070] step one, Figure 8 For the schematic cross-sectional view of Step 1 of the CMP process optimization method in the STI process provided by the present invention, see Figure 8 , provide an experimental sample, the experimental sample is a wafer filled with oxide in the shallow groove of the SiN layer, the oxide is ground to the surface of the SiN layer by the CMP process to form STI, and the PE-CVD process is used on the SiN layer SiN is formed on the surface.

[0071] The thickness of the SiN formed by the PE-CVD process is about 800 angstroms to about 1600 angstroms.

[0072] The method for forming the experimental sample is as follows: firstly, a photolithography process is used to form a pattern on the SiN layer, and then a groove is formed by an etching process, and then an oxide is deposited to cover all the grooves and the surface of the SiN layer.

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Abstract

The invention discloses an optimization method of a chemical mechanical polishing process. The method comprises the following steps of: A, providing a test sample, and after the chemical mechanical polishing (CMP) process is performed on the test sample according to the traditional chemical mechanical polishing (CMP) technical parameters, forming silicon nitride (SiN) on the surface of the test sample by adopting a plasma enhanced chemical vapor deposition (PE-CVD) process; B, forming metal tungsten on the surface of the SiN by adopting an ion beam deposition process, and cutting the test sample in the coronary direction to obtain the longitudinal section of the test sample; and C, measuring the parameters of the test sample in the longitudinal section of the test sample with a transmission electron microscope (TEM), if the parameters of the test sample are not in accordance with the technical standards, adjusting the present CMP technical parameters and executing the step A, and if the parameters of the test sample are in accordance with the technical standards, finishing the process. By the method, the CMP process can be optimized.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an optimization method of a chemical mechanical polishing process. Background technique [0002] With the wide application of electronic devices, the manufacturing process of semiconductors has been developed rapidly. In the manufacturing process of semiconductors, a chemical mechanical polishing (CMP) process is involved. Since the mid-1990s, the CMP process has been a major surface-global planarization technique, which uses relative motion between the wafer and a polishing head to planarize the wafer surface. [0003] In practical applications, in order to optimize the CMP process, it is usually necessary to grind the experimental sample under different CMP process parameters, such as using different grinding rates or using different grinding fluids. After the grinding is completed, measure the experimental sample. parameters, if the parameters of the experimental sa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/04G01N1/28H01L21/768H01L21/762H01L21/66
Inventor 胡宗福
Owner SEMICON MFG INT (SHANGHAI) CORP