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Method for improving qualification rate of PLCC encapsulated integrated circuit

An integrated circuit and pass rate technology, applied in circuits, electrical components, electrical solid devices, etc., can solve problems such as the impact of integrated circuit pass rate, and achieve the effects of improving chip performance, alleviating packaging stress, and improving pass rate.

Inactive Publication Date: 2012-06-27
SHANGHAI BEILING
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0016] In order to overcome the deficiencies in the above-mentioned prior art, the present invention aims to solve the influence of the qualified rate of integrated circuits due to the special circuit design problems of integrated circuits by improving the packaging process of PLCC packaging large-scale integrated circuits

Method used

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  • Method for improving qualification rate of PLCC encapsulated integrated circuit
  • Method for improving qualification rate of PLCC encapsulated integrated circuit
  • Method for improving qualification rate of PLCC encapsulated integrated circuit

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Embodiment Construction

[0032] The present invention, a kind of method that improves plastic PLCC encapsulation integrated circuit qualification rate, comprises the following steps:

[0033] First, thinning. At a temperature of 40°C, first attach a film on the back of the wafer, and then trim the film. The wafer is polished on the back to make the thickness within the range of 350-390um. After thinning, the The wafer is flushed with water, and finally the film is peeled off at a temperature of 45°C;

[0034] Second, stretch film, that is, heat it to a temperature of 60-80 degrees, paste a layer of elastic and sticky blue film on the back of the wafer, and fix it on a metal frame;

[0035] Third, scribing, that is, cutting each independent circuit on the entire wafer through a high-speed rotating diamond blade;

[0036] Fourth, sticking the chip, that is, the vacuum nozzle is driven by the mechanical arm to place and weld the cut silicon chip (Die) on the carrier;

[0037] Fifth, bonding, that is, u...

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Abstract

The invention relates to a method for improving qualification rate of a plastic leaded chip carrier (PLCC) encapsulated integrated circuit. The method comprises the following steps of: thinning; sticking a film; cutting a wafer; performing die bonding; bonding; performing die sealing; curing; and electroplating, and is characterized in that: a silicon slice cladding step is added between the bonding step and the die sealing step, namely a coating material is uniformly coated on the surface of a silicon slice and die sealing is performed. By using the technical solution, the silicon slice cladding step is added, so integrated circuit parameter floating failure caused by encapsulating stress can be relieved, the chip performance is improved without the changing of the conventional design and process, and the qualification rate is obviously improved.

Description

technical field [0001] The invention relates to a method for improving the qualified rate of PLCC packaged integrated circuits. Background technique [0002] Most of the existing general integrated circuits are packaged in plastic, and the most typical package is Plastic Leaded Chip Carrier (PLCC). Packaging mainly considers the power, weight, pin count, size, density, electrical response, reliability, heat dissipation, etc. of the device. The function and yield of the device are generally not factors considered by the packaging technology. [0003] In the prior art, the main technological process of PLCC packaging is as follows: [0004] 1: Thinning (Back grinding): refers to the back grinding of the wafer to control the thickness within a certain range. [0005] 2: Wafer Mounting: Wafer Mounting is mainly to attach a layer of elastic and sticky blue film to the back of the wafer, and fix it on a metal frame with a slightly larger diameter. In order to avoid the problem...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/50H01L21/56
CPCH01L23/3171H01L24/73H01L2224/32245H01L2224/48247H01L2224/73265H01L2924/14H01L2924/181H01L2924/00012H01L2924/00
Inventor 聂纪平
Owner SHANGHAI BEILING