Contact pad

Abstract

A contact pad belongs to protection circuit design field of semiconductor integrated circuit. The contact pad provided by the present invention comprises a pad metal layer, and further comprises a totally depleted layer area formed by simultaneously neutralizing and doping a first type trap and a second type trap for an active region; the totally depleted layer area is located under the pad metal layer and formed at an upper surface layer of a semiconductor substrate. Compared with the prior art, the totally depleted layer area increases a distance between an upper electrode and a lower electrode of the parasitic capacitance of the contact pad, reduces the value of the parasitic capacitance; simultaneously, the preparation of the totally depleted layer area can use the ion implantation of existing art, wherein the operation is simple and extra processes are not needed.

Description

technical field [0001] The invention relates to the field of protection circuit design of semiconductor integrated circuits, in particular to a contact pad. Background technique [0002] In the packaging technology field of semiconductor manufacturing, after the integrated circuit is manufactured, the contact pad (Pad) formed on the surface of the interconnection structure layer is electrically connected to the internal circuit as the interface between the internal circuit and the external signal, usually by The bonding method is that the metal wire completes the electrical connection between the external circuit and the contact pad. [0003] At the same time, as the feature size of the chip continues to decrease, the speed of the chip is getting faster and faster, and the requirements for the parasitic capacitance of various structures are getting higher and higher. The smaller the parasitic capacitance, the better the operating speed and frequency characteristics of the ch...

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Problems solved by technology

[0005] Through research, it is found that the STI region of the prior art that reduces parasitic capacitance has obvious disadvantages: since the formation of the shallow trench isolation layer requires a CMP (Chemical Mechanical Planarization, chemical mechanical planarization) process to complete, because the CMP has a castellation (Disshing ) effect, it is generally not easy to add an STI layer in the area directly under the pad metal layer; in addition, due to the characteristics of the preparation process of the STI layer, the height of the STI layer (depth in the Z direction) is limited, which will limit the upper and lower electrodes. The expansion of the spacing value between the further limits the effect of reducing the parasitic capacitance

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