Oled display encapsulated with a filter
A technology of light-emitting devices and light-emitting areas, applied in instruments, optics, optical components, etc., can solve the problems of fragility, high-energy film, damage to film integrity, etc.
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example 1
[0105] Fabricated and tested various Al 2 o 3 / ZnO multilayer stack in which the number and thickness of the layers are varied. The total thickness of the multilayer stack is (Angstrom).
[0106] The results showed that by Al 2 o 3 Multilayer stacks composed of ZnO layers showed few or no cracks, implying better stress regulation by the multilayer stacks.
[0107] The results also show that the multilayer Al 2 o 3 / ZnO film stack can provide good protection: after 24 and 48 hours in the humidity chamber, the two inventive devices show no dark spot growth in the center of the OLED pixel (growth at the edges can be removed by optimizing the geometry and flow rate) . The coating of these two inventive devices consisted of the following combination of layers:
[0108] al 2 o 3
[0109] ZnO
[0110] al 2 o 3
[0111] ZnO
[0112] al 2 o 3
[0113] ZnO
[0114] al 2 o 3
example 2
[0116] with Al 2 o 3 Coated OLED devices with encapsulating films of ZnO / ZnO mixtures prepared by combining the precursors of the two oxides in the microchamber tank of a spatially dependent ALD head and using water in another channel. Al 2 o 3 / ZnO mixture.
[0117] A total of 450 shaking cycles were performed. During the coating process, pure Al is first deposited 2 o 3 of thick layers. The metal precursor flows to the trimethylaluminum bubbler flow and to the diethylzinc bubbler flow were then gradually adjusted to increase the relative amount of ZnO and decrease the Al 2 o 3 The relative amount until reaching 100% ZnO film. The process is then repeated in the opposite direction, increasing the Al 2 o 3 The relative amount of ZnO is reduced, so that the final The material consists only of Al 2 o 3 composition. Mixed Al 2 0 3 / The total thickness of the ZnO film is about
[0118] After completing the coating process, a voltage is applied to the electr...
example 3
[0121] In this example, a device similar to that described above was used to achieve thin film material coating. Coated with aluminum oxide and zinc oxide. For alumina, 1M (mol / L) trimethylaluminum solution in heptane in one bubbler and water in the other. For zinc oxide, a 15 wt.% solution of diethylzinc in hexane was in one bubbler and water in the other.
[0122] The flow rate of the carrier gas through the bubbler was 50 ml / min for all oxides. For aqueous reactants, the flow rate of the dilute carrier gas was 300 ml / min. The flow rate of the inert separation gas was 2 l / min. In all cases nitrogen was used as the carrier gas. Calibration was performed to determine thickness versus number of substrate oscillations for oxide. The substrate temperature was about 220 degrees Celsius.
[0123] Encapsulated interference filters were fabricated by alternately depositing layers of zinc oxide and aluminum oxide on a 62x62x1 mm glass slide using an ALD system. The target thick...
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