Solvothermal controllable method for preparing ZnSe and ZnTe nano materials

A nanomaterial and solvothermal technology, applied in nanotechnology, binary selenium/tellurium compounds, etc., can solve the problems that have not yet been seen, and achieve the effect of simple process
CN102040201AInactive Publication Date: 2011-05-04XINJIANG UNIVERSITY
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
XINJIANG UNIVERSITY
Publication Date
2011-05-04
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a solvothermal controllable method for preparing ZnSe and ZnTe nano materials. The method comprises the following steps of: placing a Se source or Te source of an analytical reagent in an polytetrafluoroethylene inner lining; adding an ethanolamine solvent to ensure that the solution is 80 percent based on the total volume of the polytetrafluoroethylene inner lining; performing magnetic stirring for several minutes; adding the Zn source of the analytical reagent again; performing magnetic stirring uniformly and then sealing a reaction kettle; and placing in a baking oven at the temperature of 200 DEG C and reacting for 24 hours, after completing the reaction, cleaning to obtain a product. The ZnSe and ZnTe nano materials with a blende or wurtzite structure can be controllably synthesized successfully in one step in the same system by changing the Se source or the Te source through a simple solvothermal method under the mild condition for the first time. The method has the characteristics of simplicity, low cost, high yield, high uniformity of products, high controllability, environment friendliness and easiness in popularization and is suitable for large-scale production.
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Description

technical field

[0001] The invention belongs to the field of preparation of nanometer materials, and in particular relates to a method for preparing ZnSe and ZnTe nanometer materials with controllable phase and appearance by using solvothermal technology. Background technique

[0002] ZnSe and ZnTe, as important wide-bandgap II-VI semiconductor materials, have been paid attention to by people, and have broad application prospects in the fields of optoelectronic devices, biosensors, photocatalysis, and solar materials. ZnSe and ZnTe (with a band gap of 2.7ev and 2.26eV respectively) have the advantages of wide band gap, direct band transition, and can work under high temperature conditions, and can be used to make nonlinear optoelectronic devices, blue-green laser devices, photodetectors and Nuclear radiation detectors, etc. Nanostructured ZnSe and ZnTe materials have specific properties that many macroscopic materials do not have, such as small size effect, surface effect, ...

Claims

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