Semiconductor device and manufacturing method thereof

Abstract

The method of manufacturing a semiconductor device includes forming an insulating film of a silicon compound-group insulation film; forming an opening in the insulation film, applying an active energy beam in an atmosphere containing hydrocarbon gas to form a barrier layer of a crystalline SiC, and forming an interconnection structure of copper in the opening with the barrier layer formed in.

Description

technical field [0001] The present invention relates to a semiconductor device and its manufacturing method, and more particularly to a semiconductor device including copper wiring and its manufacturing method. Background technique [0002] Along with the demand for miniaturization and high performance of semiconductor devices, in the formation of wiring layers of semiconductor devices in recent years, a so-called damascene process is adopted, that is, after forming groove patterns and hole patterns on the interlayer insulating film, then Grooves and holes are embedded with wiring material. As a wiring material, copper (Cu) is used as a material having lower resistance instead of conventional aluminum. [0003] Copper is a metal material that is easily diffused in a silicon oxide film that is a main material of an interlayer insulating film. If copper diffuses in the interlayer insulating film, there is a possibility of causing a wiring short circuit, wiring failure, or th...

AI Technical Summary

Problems solved by technology

If copper diffuses in the interlayer insulating film, there is a possibility of causing wiring short circuit or wiring failure, etc.

Images