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Semiconductor device and manufacturing method thereof

A manufacturing method and semiconductor technology, which are applied in the manufacturing of semiconductor/solid-state devices, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as defects, wiring short circuits, etc., and achieve the effect of improving oxidation resistance and reliability.

Active Publication Date: 2015-08-05
FUJITSU LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If copper diffuses in the interlayer insulating film, there is a possibility of causing wiring short circuit or wiring failure, etc.

Method used

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  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0123]Using the above manufacturing process, a semiconductor device using β-SiC with a film thickness of 5 nm as the barrier layers 50 and 76 was manufactured.

Embodiment 2

[0125] Using the above manufacturing process, a semiconductor device using β-SiC with a film thickness of 10 nm as the barrier layers 50 and 76 was manufactured.

Embodiment 3

[0127] Using the above manufacturing process, a semiconductor device using ?-SiC with a film thickness of 20 nm as the barrier layers 50, 76 was manufactured.

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Abstract

The method of manufacturing a semiconductor device includes forming an insulating film of a silicon compound-group insulation film; forming an opening in the insulation film, applying an active energy beam in an atmosphere containing hydrocarbon gas to form a barrier layer of a crystalline SiC, and forming an interconnection structure of copper in the opening with the barrier layer formed in.

Description

technical field [0001] The present invention relates to a semiconductor device and its manufacturing method, and more particularly to a semiconductor device including copper wiring and its manufacturing method. Background technique [0002] Along with the demand for miniaturization and high performance of semiconductor devices, in the formation of wiring layers of semiconductor devices in recent years, a so-called damascene process is adopted, that is, after forming groove patterns and hole patterns on the interlayer insulating film, then Grooves and holes are embedded with wiring material. As a wiring material, copper (Cu) is used as a material having lower resistance instead of conventional aluminum. [0003] Copper is a metal material that is easily diffused in a silicon oxide film that is a main material of an interlayer insulating film. If copper diffuses in the interlayer insulating film, there is a possibility of causing a wiring short circuit, wiring failure, or th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768H01L21/316H01L23/522
CPCH01L23/53238H01L21/76826H01L21/76831H01L21/76829H01L23/485H01L21/76825H01L21/02203H01L21/02282H01L23/53295H01L21/3105H01L21/31695H01L21/76807H01L2924/0002H01L21/02126H01L21/02274H01L2924/00
Inventor 尾崎史朗中田义弘小林靖志美浓浦优一
Owner FUJITSU LTD
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