30results about How to "Achieve low temperature" patented technology

The invention provides a liquid resin composition for electronic part sealing that is good in fluidity in a narrow gap, being free from void generation, and that excels in fillet formation; and an electronic part apparatus sealed thereby of high reliability (moisture resistance and thermal shock resistance). The liquid resin composition for electronic part sealing is characterized by containing (A) epoxy resin including a liquid epoxy resin, (B) hardening agent including a liquid aromatic amine, (C) hydrazide compound of less than 2 [mu]m average particle diameter and (D) inorganic filler of less than 2 [mu]m average particle diameter.

The invention provides a resin adhesive and a preparation method thereof. The resin adhesive is prepared from the following raw materials in percentages by weight: 30-50% of a formaldehyde solution, 10-25% of phenol, 10-20% of melamine-modified polyhydroxymethyl urea, 20-40% of lignin, 5-10% of a polyaldehyde cross-linking agent and 3-6% of a composite catalyst, wherein the mass concentration of the formaldehyde solution is 35-40%; and the composite catalyst comprises a mixture of one of zinc oxide, magnesium oxide, calcium hydroxide, barium hydroxide, potassium hydroxide and potassium carbonate, and sodium hydroxide. With the melamine-modified polyhydroxymethyl urea as the raw material, the storage stability of methylol urea is improved, the storage period of the resin adhesive is prolonged, the polymerization reaction of an ortho-response point with relatively poor activity in a phenol structure in the lignin is directionally promoted by the composite catalyst, and low-temperature fast solidification of the resin adhesive is achieved.

The invention discloses a laser doping method for a polycrystalline silicon film. The laser doping method comprises the following steps: growing a silicon oxide layer on a surface of a silicon wafer substrate; depositing a polycrystalline silicon film on the silicon oxide layer, wherein the polycrystalline silicon film is an in-situ doped polycrystalline silicon film or an intrinsic polycrystalline silicon film, and if the polycrystalline silicon film is the intrinsic polycrystalline silicon film, a doping source is introduced on the intrinsic polycrystalline silicon film; and irradiating thepolycrystalline silicon film by a laser. For the in-situ doped polycrystalline silicon film, the laser is adopted to irradiate the polycrystalline silicon film so as to activate doped atoms. And if the polycrystalline silicon film needing to be externally introduced with the doping source is irradiated by the laser, a doping agent is pushed into the polycrystalline silicon film to realize doping.According to the invention, low-temperature doping of the polycrystalline silicon film can be realized, and local doping of the polycrystalline silicon film can be realized too.

Provided is a refrigerator that can lower temperature and keep temperature constant. The refrigerator comprises a freezing storage chamber set to a freezing temperature range, a first accommodating container provided so as to be adjacent to the freezing storage chamber and formed so that cold air is supplied, and a second accommodating container provided so as to be adjacent to the freezing storage chamber and the first accommodating container and formed so that cold air is not supplied. Due to having this configuration, the refrigerator can lower the temperature and keep the temperature constant in the second accommodating container.

This invention provides a joining device for pressure welding a pressure welding part that can realize pressure welding under low temperature and low pressure conditions by rendering the moisture content of the pressure welding part atmosphere within the device relatively smaller than the moisture content of the atmosphere outside the device. In this case, the amount of water adsorbed on each surface of a joining metal terminal and a metal terminal to be joined constituting the pressure welding part is brought to not more than 1 10<16> molecules / cm<2>.

The invention discloses a low-temperature grain storage double-layer wall square silo, and relates to the technical field of grain storage, the low-temperature grain storage double-layer wall square silo comprises a warehousing equipment layer, a grain storage layer and a delivery equipment layer, and the warehousing equipment layer is provided with a grain conveyor; the grain storage layer comprises a plurality of vertically and horizontally arranged grain storage units, each grain storage unit is a conical bottom bin, a bin inlet is formed in the top of each grain storage unit, a bin outlet is formed in the bottom of each grain storage unit, a plurality of scrapers are arranged in the bin outlet equipment layer, and the scrapers are in lap joint with a conveying belt to a belt conveyor in the middle of the bin outlet equipment layer; a discharge port of the grain conveyor is communicated with the warehouse inlet, and a warehouse outlet is communicated with the scraper conveyor; a waterproof layer I is arranged on the inner wall of the grain storage unit, and a waterproof layer II is arranged on the outer wall of the grain storage unit; the bottoms of the grain storage units are provided with first air openings, the upper portions of the grain storage units are provided with second air openings, and ventilation pipes communicated with the first air openings are distributed at the bottoms of the grain storage units. The square silo is convenient to go out in turns, higher in adaptability, large in overall grain storage capacity and high in land utilization efficiency; the waterproof and heat-insulating performance is excellent; and in-out bin and ventilation are all automatically operated, so that the cost is relatively low.