A kind of preparation method of graphene film with low energy consumption

Abstract

The invention discloses a preparation method of a graphene film with low energy consumption: (1) coal is converted into semi-coke and high-temperature volatile products through coal classification conversion under high temperature conditions in an oxygen-free atmosphere; (2) the high-temperature volatile products are separated and pre-processed (3) The gas-phase light component enters the graphene growth reaction system based on chemical vapor deposition method, and diffuses to the surface of the growth substrate in the system, and the light aromatic components in the gas-phase light component are obtained. The compound component is the carbon source, and the hydrogen-rich gas component in the gas phase light component is used as the production atmosphere to realize the synthetic growth of graphene on the surface of the growth substrate at a set temperature. The method uses coal as a carbon source, uses coal graded conversion technology to obtain gas-phase light compounds, and provides carbon precursors and a reducing growth atmosphere for the growth of CVD graphene, so that graphene can grow at low temperature and low energy consumption. Value-added utilization provides program reference.

Description

technical field [0001] The invention relates to the field of graphene preparation, in particular to a preparation method of a graphene film with low energy consumption. Background technique [0002] The chemical vapor deposition (CVD)-based graphene growth method is currently the most promising high-quality industrial preparation method for graphene due to its ability to achieve large-scale and high-quality growth of graphene, and has great potential for development. Conventional CVD-based graphene growth processes are mainly based on methane (CH 4 ) is the carbon precursor, and the reducing gas hydrogen (H 2 ) atmosphere is a graphene growth atmosphere, and Cu is thin as a growth substrate, and this traditional process graphene growth reaction requires a higher reaction temperature (above 1000 ° C), resulting in high energy consumption of graphene growth, increasing the graphene growth process. The complexity of the process and the investment cost of equipment, the high t...

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Problems solved by technology

The conventional CVD-based graphene growth process is mainly based on methane (CH 4 ) as the carbon precursor, with the reducing gas hydrogen (H 2 ) atmosphere is a graphene growth atmosphere, and Cu thin film is a growth substrate. The graphene growth reaction in this traditional process requires a higher reaction temperature (above 1000 ° C), resulting in high energy consumption for graphene growth and increasing the graphene growth process. The complexity of the process and the investment cost of equipment, the high temperature required for graphene growth and the resulting complexity of the process and high energy consumption have become one of the main constraints on the large-scale industrial application of graphene.

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