Preparation method of low-energy-consumption graphene film

Abstract

The invention discloses a preparation method of a low-energy-consumption graphene film. The preparation method comprises the following steps of: (1) converting coal into semicoke and a high-temperature volatile product under an oxygen-free atmosphere high-temperature condition through coal grading conversion; (2) carrying out separation pretreatment on the high-temperature volatilization product to obtain gas-phase light components; and (3) enabling the gas-phase light components to enter a graphene growth reaction system based on a chemical vapor deposition method, diffusing the gas-phase light components to the surface of a growth substrate in the system, and synthesizing and growing graphene on the surface of the growth substrate at a set temperature by taking a light aromatic compoundcomponent in the gas-phase light components as a carbon source and taking a hydrogen-rich gas component in the gas-phase light components as a production atmosphere. According to the method, coal serves as a carbon source, a gas-phase light compound is obtained through a coal grading conversion technology, meanwhile, a carbon precursor and a reducing growth atmosphere are provided for growth of CVD graphene, low-temperature and low-energy-consumption growth of the graphene is achieved, and a scheme reference is provided for high-added-value utilization of the coal.

Description

technical field [0001] The invention relates to the field of graphene preparation, in particular to a method for preparing a graphene film with low energy consumption. Background technique [0002] The graphene growth method based on chemical vapor deposition (CVD) is currently the most promising high-quality industrial preparation method of graphene because it can realize large-scale and high-quality growth of graphene, and has great development potential. The conventional CVD-based graphene growth process is mainly based on methane (CH 4 ) as the carbon precursor, and the reducing gas hydrogen (H 2 ) atmosphere is a graphene growth atmosphere, and Cu thin film is a growth substrate. The graphene growth reaction in this traditional process requires a higher reaction temperature (above 1000 ° C), resulting in high energy consumption for graphene growth and increasing the graphene growth process. The complexity of the process and the investment cost of the equipment, the hi...

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Problems solved by technology

The conventional CVD-based graphene growth process is mainly based on methane (CH 4 ) as the carbon precursor, with the reducing gas hydrogen (H 2 ) atmosphere is a graphene growth atmosphere, and Cu thin film is a growth substrate. The graphene growth reaction in this traditional process requires a higher reaction temperature (above 1000 ° C), resulting in high energy consumption for graphene growth and increasing the graphene growth process. The complexity of the process and the investment cost of equipment, the high temperature required for graphene growth and the resulting complexity of the process and high energy consumption have become one of the main constraints on the large-scale industrial application of graphene.

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