Laser doping method for polycrystalline silicon film

Abstract

The invention discloses a laser doping method for a polycrystalline silicon film. The laser doping method comprises the following steps: growing a silicon oxide layer on a surface of a silicon wafer substrate; depositing a polycrystalline silicon film on the silicon oxide layer, wherein the polycrystalline silicon film is an in-situ doped polycrystalline silicon film or an intrinsic polycrystalline silicon film, and if the polycrystalline silicon film is the intrinsic polycrystalline silicon film, a doping source is introduced on the intrinsic polycrystalline silicon film; and irradiating thepolycrystalline silicon film by a laser. For the in-situ doped polycrystalline silicon film, the laser is adopted to irradiate the polycrystalline silicon film so as to activate doped atoms. And if the polycrystalline silicon film needing to be externally introduced with the doping source is irradiated by the laser, a doping agent is pushed into the polycrystalline silicon film to realize doping.According to the invention, low-temperature doping of the polycrystalline silicon film can be realized, and local doping of the polycrystalline silicon film can be realized too.

Description

technical field [0001] The invention belongs to the technical field of photovoltaics, and in particular relates to a laser doping method for polysilicon thin films. Background technique [0002] Photovoltaic power generation, as an important new renewable green energy, has been widely researched and utilized by countries all over the world; among many solar cells, silicon-based solar cells have the advantages of abundant raw materials and non-toxicity, and have become the main body of the solar cell market today, especially Polycrystalline silicon cells have high efficiency, relatively simple and reasonable production process and production cost. [0003] Polysilicon is a form of elemental silicon. Polycrystalline silicon can be formed by melting amorphous silicon and solidifying it under supercooled conditions. Currently, polysilicon is widely used to form polysilicon thin films. At present, there are a lot of researches on the preparation of polysilicon thin films, but ...

AI Technical Summary

Problems solved by technology

At present, there are a large number of researches on the preparation of polysilicon thin films, but the current doping of polysilicon thin films requires high temperature and consumes a lot of energy