Removal method of surface oxide
A surface oxide and substrate surface technology, which is applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of semiconductor substrate surface characteristics deterioration and resistance uniformity drop
Active Publication Date: 2012-05-23
SEMICON MFG INT (SHANGHAI) CORP
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[0010] In the technical solution disclosed above, the control of remote plasma etching is an important factor affecting the etching effect during the surface oxide removal process and the surface characteristics of the semiconductor substrate after the removal process. The deterioration of the surface characteristics of the semiconductor substrate will make The resistance uniformity (Rs Uniformity) of the film layer such as metal silicide formed on the peninsula body substrate subsequently decreases
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[0030] The invention provides a method for removing surface oxides, which optimizes the flow rate and reaction pressure of nitrogen fluoride and ammonia in the etching process, improves the etching effect in the removal process of surface oxides, and improves the removal process. Surface properties of post-semiconductor substrates.
[0031] In order to make the methods, features and advantages of the present invention more comprehensible, the specific implementation manners of the present invention will be described in detail below in conjunction with the accompanying drawings.
[0032] Existing surface oxide removal methods do not limit the flow rate and reaction pressure of etching reaction gases nitrogen fluoride and ammonia, but the inventors have found that the flow rate and reaction pressure of nitrogen fluoride and ammonia are the factors that affect the etching process and the etching process. The main factor of the rate (etch rate), if the flow rate of nitrogen fluori...
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The invention discloses a removal method of surface oxide. The method comprises: providing a semiconductor substrate the surface of which is at least provided with a silicon region; carrying out remote electric slurry etching on the semiconductor substrate, wherein the etching gas comprises fluorate nitrogen and ammonia gas, the flow capacity of the fluorate nitric is 2sccm to 10sccm, the flow capacity of ammonia gas is 80sccm to 150sccm, and the air pressure is 4mTorr to 6mTorr; and carrying out in-place heating on the semiconductor substrate. Compared with the prior art, in the invention, the etching effect of the surface oxide is improved, and the surface characteristic of the semiconductor substrate of the surface oxide after the removal process is improved.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for removing surface oxides. Background technique [0002] With the development of semiconductor technology, after entering the 65nm process, the self-aligned silicide contacts of semiconductor devices began to use nickel-silicon materials, and cleaning the substrate surface before nickel deposition to remove the native oxide layer (native oxide) has become a very critical process step. The traditional argon plasma bombardment process and hydrofluoric acid immersion process have encountered many process problems. Since the argon plasma bombardment process is carried out in an environment of plasma and particle bombardment, it will cause damage to the substrate material, especially after entering the 65nm process, the damage is particularly serious. The hydrofluoric acid immersion process is less selective to silicon oxide and silicon, causing loss of the silicon...
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IPC IPC(8): H01L21/311
Inventor 胡宇慧保罗
Owner SEMICON MFG INT (SHANGHAI) CORP