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Quartz glass crucible and preparation method thereof

A quartz glass crucible and crucible technology, applied in glass manufacturing equipment, glass molding, chemical instruments and methods, etc., can solve the problems of complex process, high product cost, difficult to meet production requirements, etc., and achieve stable crystal pulling process, use Long life and not easy to deform

Active Publication Date: 2012-10-10
ADVANCED QUARTZ MATERIAL (HANGZHOU) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Usually, the method to solve the anti-deformation ability of quartz crucible and prolong the service life is to improve the purity of quartz crucible to improve the viscosity of quartz crucible at high temperature to improve the anti-deformation ability of quartz crucible. For example, Chinese patent CN 1671891 adopts extremely high purity The method of forming a transparent inner layer of synthetic sand on the inner surface of the quartz crucible to prolong the service time of the quartz crucible at high temperature, but this method uses a large amount of very expensive synthetic sand, resulting in high product costs and complicated processes. difficult to meet production requirements

Method used

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  • Quartz glass crucible and preparation method thereof
  • Quartz glass crucible and preparation method thereof
  • Quartz glass crucible and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] 833g of natural quartz sand doped with Al element of type b (predicted thickness b1=1.0mm, estimated area s1=3500cm of the outer layer of the wall matrix) 2 , density ρ1=1.4g / cm 3 , get the coefficient K=1.7), put into the rotating 20-inch quartz crucible mould, the quartz sand is evenly distributed on the rotating mould by the action of centrifugal force to form the outer layer of the wall matrix of the quartz crucible matrix. Then pour the natural quartz sand into the quartz crucible mold to form a crucible-shaped matrix layer under the action of centrifugal force, and then pass a strong current to the electrode on the upper part of the mold to form an arc, and then instantly form a high temperature state > 2000 ° C in the mold. The quartz sand melts slowly, the outer layer of the wall matrix melts to form the outer surface layer of the wall, and the matrix layer forms the crucible matrix. After the quartz sand is melted, it is taken out from the mold after cooling, a...

Embodiment 2

[0037] 1666g of natural quartz sand doped with Al element of model c (predicted thickness b1=2.0mm, estimated area s1=3500cm of the outer layer of the wall matrix) 2 , density ρ1=1.4g / cm 3 , get the coefficient K=1.7), put into the rotating 20-inch quartz crucible mould, the quartz sand is evenly distributed on the rotating mould by the action of centrifugal force to form the outer layer of the wall matrix of the quartz crucible matrix. Then pour the natural quartz sand into the quartz crucible mold to form a crucible-shaped matrix layer under the action of centrifugal force, and then pass a strong current to the electrode on the upper part of the mold to form an arc, and then instantly form a high temperature state > 2000 ° C in the mold. The quartz sand melts slowly, the outer layer of the wall matrix melts to form the outer surface layer of the wall, and the matrix layer forms the crucible matrix. After the quartz sand is melted, it is taken out from the mold after cooling,...

Embodiment 3

[0039] 2499g of natural quartz sand doped with Al element of model d (predicted thickness b1=3.0mm, estimated area s1=3500cm of the outer layer of the wall matrix) 2 , density ρ1=1.4g / cm 3 , get the coefficient K=1.7), put into the rotating 20-inch quartz crucible mould, the quartz sand is evenly distributed on the rotating mould by the action of centrifugal force to form the outer layer of the wall matrix of the quartz crucible matrix. Then pour the natural quartz sand into the quartz crucible mold to form a crucible-shaped matrix layer under the action of centrifugal force, and then pass a strong current to the electrode on the upper part of the mold to form an arc, and then instantly form a high temperature state > 2000 ° C in the mold. The quartz sand melts slowly, the outer layer of the wall matrix melts to form the outer surface layer of the wall, and the matrix layer forms the crucible matrix. After the quartz sand is melted, it is taken out from the mold after cooling,...

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Abstract

The invention discloses a quartz glass crucible which comprises a crucible basic body, wherein outer surfaces are covered outside the crucible basic body; the outer surfaces are outer surface layers of wall parts of the crucible basic body or all outer surface layers of the crucible basic body; the theoretical thickness of the wall part outer surface layers or the all outer surface layers is 0.2-0.3mm, and the layers are obtained by melting natural quartz sand doped with aluminum elements coming from aluminum hydroxide and / or an aluminum salt; the mass of the aluminum elements is calculated according to aluminum oxide which can be generated; and the mass content of the aluminum elements in the natural quartz sand doped with the aluminum elements is 100-1,000ppm. The quartz glass crucible is difficult to deform in a use process of pulling monocrystalline silicon, has longer service life, can be used for meeting the requirement for long-time use of a crucible with a larger diameter and can obtain a more stable crystal pulling progress.

Description

(1) Technical field [0001] The invention relates to a quartz glass crucible, in particular to a quartz glass crucible used in the production of single crystal silicon by a pulling method, and a preparation method of the quartz glass crucible. (2) Background technology [0002] CZ method is widely used in the production process of monocrystalline silicon. Quartz crucible is widely used as a container for polycrystalline silicon material in the process of high-temperature production of monocrystalline silicon by CZ method. Therefore, quartz crucible is used as a raw material for the production of monocrystalline silicon. The object determines the key factor for the smooth production of monocrystalline silicon. [0003] The process of producing monocrystalline silicon by the CZ method is to put the raw polysilicon crystal block into a quartz crucible, heat and melt it in a single crystal furnace, and then immerse a rod-shaped seed crystal (called a seed crystal) into the molten...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B15/10C03B20/00
CPCC03B19/095
Inventor 王春来周勇渥美崇
Owner ADVANCED QUARTZ MATERIAL (HANGZHOU) CO LTD