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Method for removing a deposition on an uncapped multilayer mirror of a lithographic apparatus, lithographic apparatus and device manufacturing method

A mirror, deposit technology, applied in the field of device manufacturing, lithography equipment, can solve the problem of low cleaning rate

Inactive Publication Date: 2011-05-25
ASML NETHERLANDS BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, experiments on ruthenium substrates have shown that the cleaning rate with H2 radicals is much lower than that on silicon substrates and completely cleans ruthenium substrates (i.e. removes full tin) is not possible

Method used

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  • Method for removing a deposition on an uncapped multilayer mirror of a lithographic apparatus, lithographic apparatus and device manufacturing method
  • Method for removing a deposition on an uncapped multilayer mirror of a lithographic apparatus, lithographic apparatus and device manufacturing method
  • Method for removing a deposition on an uncapped multilayer mirror of a lithographic apparatus, lithographic apparatus and device manufacturing method

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Embodiment Construction

[0022] figure 1 A lithographic apparatus 1 according to an embodiment of the invention is schematically shown. The apparatus 1 comprises an illumination system (illuminator) IL configured for conditioning a radiation beam PB (eg ultraviolet (UV) radiation or extreme ultraviolet (EUV) radiation). A patterning device support structure (eg mask table) MT is configured to support a patterning device (eg mask) MA and is connected to a first positioning device PM configured to precisely position the patterning device according to certain parameters. A substrate table (eg wafer table) WT is configured to hold a substrate (eg resist coated wafer) W and is connected to a second positioner PW configured to precisely position the substrate according to certain parameters. Projection system (eg refractive projection lens system) PL is configured for projecting patterned radiation beam PB onto target portion C of substrate W (eg comprising one or more dies).

[0023] The illumination sys...

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Abstract

A method for removal of a deposition on an uncapped multilayer mirror of an apparatus is provided. The method includes providing a gas comprising one or more Of H2, D2 and HD, and one or more additional compounds selected from hydrocarbon compounds and / or silane compounds in at least part of the apparatus; producing hydrogen and / or deuterium radicals and radicals of the one or more additional compounds, from the gas; and bringing the uncapped multilayer mirror with deposition into contact with at least part of the hydrogen and / or deuterium radicals and the radicals of the one or more additional compounds to remove at least part of the deposition.

Description

technical field [0001] The invention relates to a method for removing deposits on an uncovered multilayer mirror of a lithographic apparatus, a lithographic apparatus, and a method of component production. Background technique [0002] A lithographic apparatus is a machine that applies a desired pattern to a substrate, usually a target portion of the substrate. For example, lithographic equipment may be used in the manufacture of integrated circuits (ICs). In this case, a patterning device, alternatively referred to as a mask or reticle, may be used to generate the circuit pattern to be formed on the individual layers of the IC. The pattern can be transferred onto a target portion (eg, comprising a portion, one or more dies) on a substrate (eg, a silicon wafer). Transfer of the pattern is usually achieved by imaging the pattern onto a layer of radiation sensitive material (resist) provided on the substrate. Typically, a single substrate will contain a network of successiv...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20
CPCG03F7/70925G03F7/70916G03F7/70933H01L21/0274
Inventor V·班尼恩M·杰克W·索尔M·凡赫彭
Owner ASML NETHERLANDS BV