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EDRAM (Enhanced Dynamic Random Access Memory) unit of gain unit, memory and operating method

An operation method and MOS transistor technology, applied in static memory, digital memory information, information storage, etc., can solve the problems of storage charge leakage and short data retention time of the gain unit eDRAM unit, and achieve long data retention time and improve data retention. The effect of low reading speed and refresh rate

Inactive Publication Date: 2011-06-01
FUDAN UNIV
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Problems solved by technology

[0010] The technical problem to be solved by the present invention is to solve the problem that the storage charge of the gain unit eDRAM unit leaks faster and the data retention time is short

Method used

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  • EDRAM (Enhanced Dynamic Random Access Memory) unit of gain unit, memory and operating method
  • EDRAM (Enhanced Dynamic Random Access Memory) unit of gain unit, memory and operating method
  • EDRAM (Enhanced Dynamic Random Access Memory) unit of gain unit, memory and operating method

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Embodiment Construction

[0035] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0036] image 3 Shown is a schematic structural diagram of the eDRAM unit of the gain unit according to the first embodiment of the present invention. Such as image 3 As shown, the gain unit eDRAM unit 400 includes a write MOS transistor 401, a read MOS transistor 402, a coupled complementary MOS transistor 403, a write word line (Write Word Line, WWL) 406, a write bit line (Write Bit Line, WBL) 407, a read A word line (Read Word Line, RWL) 408, a read bit line (Read Bit Line, RBL) 409, and a common bit line (Common Bit Line, CBL) 410 connected to a fixed voltage. Wherein, the gate of the write MOS transistor 401 is connected to WWL, so that the write MOS transistor 401 is controlled by WWL; the source (or drain) of the MOS transistor 401 is connected to WBL, a...

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Abstract

The invention belongs to the technical field of dynamic random access memories and in particular relates to an EDRAM (Enhanced Dynamic Random Access Memory) unit of a gain unit, a memory and an operating method thereof. Based on a writing MOS (Metal Oxide Semiconductor) transistor, a reading MOS transistor, a writing word line, a writing bit line, a reading word line, a reading bit line and an equivalent parasitic capacitor, the EDRAM unit of the gain unit provided by the invention is obtained by increasing a coupling complementary MOS transistor and a shared bit line which is connected to a fixed voltage such that the EDRAM unit of the gain unit has the characteristics of long data retention time and low refreshing frequency; and the memory formed by the EDRAM unit of the gain unit has the characteristics of high reading speed and low power consumption.

Description

technical field [0001] The invention belongs to the technical field of dynamic random access memory (DRAM), in particular to an embedded dynamic random access memory (eDRAM) technology, in particular to a gain unit eDRAM (Gain Cell eDRAM) unit, memory and operation method. Background technique [0002] Memory can be divided into off-chip memory and embedded memory. Embedded memory is a basic part of the chip that is integrated in the chip with various logic and mixed signal IP modules in the chip system. Embedded memory includes embedded static random access memory (eSRAM) and embedded dynamic random access memory (eDRAM). Among them, eDRAM has the characteristics of small cell area because its unit only includes one transistor and one capacitor, compared with the six transistors of eSRAM unit . [0003] However, the difficulty of traditional eDRAM is that the manufacture of its capacitors is generally not compatible with the standard MOS process, so the DRAM process is ve...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/401G11C11/409
Inventor 林殷茵孟超董存霖程宽马亚楠严冰解玉凤
Owner FUDAN UNIV
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