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Silicon oxide nitride oxide semiconductor (SONOS) structure and method for forming same

A technology of grooves and charge layers, which is applied in the manufacture of electrical components, electrical solid devices, semiconductor/solid devices, etc., can solve problems such as SONOS structural failure, and achieve the effect of reducing the feature size

Inactive Publication Date: 2012-08-22
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] The problem that the present invention solves is that with the development of semiconductor integration, the problem that each unit of SONOS structure is close to 2-bit is invalid

Method used

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  • Silicon oxide nitride oxide semiconductor (SONOS) structure and method for forming same
  • Silicon oxide nitride oxide semiconductor (SONOS) structure and method for forming same
  • Silicon oxide nitride oxide semiconductor (SONOS) structure and method for forming same

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Embodiment Construction

[0028] It can be seen from the background technology that with the further development of semiconductor integration in the existing SONOS structure, the 2-bit function per unit will lead to a decrease in resolution with the ever-shrinking distance between unit 201 and unit 202, and even lead to failure of the SONOS structure in severe cases. .

[0029] For this reason, the present invention proposes a kind of advanced SONOS structure, comprises: semiconductor substrate; The well region that is formed in the semiconductor substrate; The trench that is formed in the well region; The first medium that is formed in trench sidewall and bottom layers; separate charge trapping layers located at two inner corners of the trench and the charge trapping layer is located on the surface of the first dielectric layer; a second dielectric layer located on the surface of the charge trapping layer; located on the first dielectric layer A polysilicon layer is formed on the surface of the second...

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Abstract

The invention relates to a silicon oxide nitride oxide semiconductor (SONOS) structure and a method for forming the same. The method for forming the SONOS structure comprises the following steps of: providing a semiconductor substrate; forming a groove in the semiconductor substrate; forming a well region in the semiconductor substrate on which the groove is formed; forming first dielectric layers on the side wall and the bottom of the groove; forming separated trapping charge layers in two inner corners of the groove, wherein the trapping charge layers are positioned on the surfaces of the first dielectric layers; forming second dielectric layers on the surfaces of the trapping charge layers; forming polycrystalline silicon layers between the first dielectric layers and the second dielectric layers, wherein the polycrystalline silicon layers are filled in the groove; and forming a source electrode region and a drain electrode region which are positioned on both sides of the groove inthe well region. The SONOS structure provided by the invention has the function of 2-bit for each unit, and the bit resolution of each unit is high.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a SONOS structure and a forming method thereof. Background technique [0002] Generally, semiconductor memory used to store data is classified into volatile memory and non-volatile memory, volatile memory is prone to lose its data when power is interrupted, and non-volatile memory can retain its data even when power is interrupted data. Non-volatile semiconductor memory is relatively small compared to other non-volatile storage technologies (eg, disk drives). Therefore, nonvolatile memories have been widely used in mobile communication systems, memory cards, and the like. [0003] Recently, a nonvolatile memory having a silicon-oxide-nitride-oxide-silicon (SONOS) structure, ie, a SONOS flash memory, has been proposed. The SONOS flash memory has very thin cells, which are easy to manufacture and are easily integrated into, for example, the peripheral region and / or log...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/28H01L21/8247H01L29/423H01L27/115H10B69/00
Inventor 陈德艳郑大燮
Owner SEMICON MFG INT (SHANGHAI) CORP