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Method for preparing composition containing indium alcoholate and tin alcoholate and composition containing indium alcoholate and tin alcoholate prepared thereby

A manufacturing method and composition technology, which is applied in the field of compositions containing indium alkoxide and tin alkoxide, can solve the problems of inconvenience, general methods and products without suitable methods and structures, and achieve the effect of low resistivity

Inactive Publication Date: 2013-05-22
NAT KAOHSIUNG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] It can be seen that the above-mentioned existing indium tin oxide manufacturing method and the obtained indium tin oxide obviously still have inconvenience and defects in the method, product structure and use, and need to be further improved urgently.
In order to solve the above-mentioned existing problems, relevant manufacturers have tried their best to find a solution, but no suitable design has been developed for a long time, and there is no suitable method and structure for general methods and products to solve the above-mentioned problems. This is obviously a problem that relevant industry players are eager to solve

Method used

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  • Method for preparing composition containing indium alcoholate and tin alcoholate and composition containing indium alcoholate and tin alcoholate prepared thereby
  • Method for preparing composition containing indium alcoholate and tin alcoholate and composition containing indium alcoholate and tin alcoholate prepared thereby

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0061] (1) Preparation of compositions containing indium alkoxide and tin alkoxide

[0062] (1), take anhydrous grade InCl 3 (0.885g, 0.004mole) was dissolved in 1.18g (0.016mole) 1-butanol (1-butanol) and 20ml (17.76g) THF mixed solvent and obtained colorless solution A after uniform stirring at room temperature; Water grade SnCl 4 (0.16g, 0.00044mole) was dissolved in 1-butanol (0.13g, 0.0017mole) and stirred uniformly at room temperature to obtain a colorless solution B; solution B was dropped into solution A dropwise, and at room temperature After being stirred under low pressure, it becomes transparent and colorless, and then the reaction temperature is set at 5° C. and reacted for 0.5 hours to obtain a first solution containing an indium alkoxide precursor and a tin alkoxide precursor.

[0063] (2), use the drop-by-drop method to dilute the diluted triethylamine solution [containing 0.5ml (0.405g, 0.00547mole) 1-butanol, 4.5ml (4g) THF and 1.4g (0.0139mole) Triethylam...

Embodiment 2

[0096] The formulation and composition preparation process of this example are the same as in Example 1, and the preparation of the ITO thin film is the same as that of the ITO-glass substrate sample in Example 1, except that THF as the first solvent is changed to DMF, and In the preparation of ITO films, no water was added before wet coating. The heat-treated ITO film prepared in this example is analyzed by EDS, and the result is: the ITO film produced in this example still contains a small amount of chlorine-containing substances, that is, InCl 3 and SnCl 4 Reaction may be incomplete, or HCl.NR 3 Salts or resulting complexes cannot be completely precipitated from DMF (Cl / (In+Sn)=1.5at%); and a small amount of carbon-containing organic substances (C / (In+Sn)=5.2at%); Sn / (Sn+In)=10.6at%.

Embodiment 3

[0098] The formulation and composition preparation process of this embodiment are the same as in Example 1, and the preparation of ITO thin film is the same as that of the ITO-glass substrate sample in Example 1, except that the amount of solvent THF in step (1) is changed from 20ml ( 17.76g) into 11ml (8.8g), and in step (3) only add the chelating agent of 0.4g (0.004mole) and do not add 1-butanol. The heat-treated ITO thin film that the present embodiment makes is analyzed by EDS, and the result is: do not contain the substance of chlorine, but contain very small amount of organic substance (C / (In+Sn)=1.1at%); Sn / (Sn+ In) = 10.5 at%. The surface resistivity of the sample obtained by further annealing the heat-treated ITO film varies depending on the temperature treatment conditions, and the results are similar to those in Example 1. In each step in this embodiment, the proportioning of various substances is different from that of Embodiment 1:

[0099] step 1):

[0100] ...

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Abstract

The invention discloses a method for preparing a composition containing indium alcoholate and tin alcoholate and the composition containing indium alcoholate and tin alcoholate prepared thereby. The method comprises the following steps: a, reacting anhydrous indium halide and anhydrous tin halide dissolved in a first solvent with an alcohol having 3 to 20 carbon atoms at a first reaction temperature between 40 DEG C below zero and 60 DEG C to obtain first solution containing an indium alcoholate precursor and a tin alcoholate precursor; and b, stepwise dripping alkali catalyst solution containing an alkali catalyst and a dilute solvent into the first solution, continuing reaction at a second reaction temperature between 40 DEG C below zero and 60 DEG C and precipitating a salt precipitate, and removing the salt precipitate to obtain the composition containing the indium alcoholate and the tin alcoholate. The first solvent does not contain hydroxyl and can dissolve the anhydrous indiumhalide, anhydrous tin halide, the alkali contact and the alcohol, and the dilute solvent may be the first solvent or the alcohol.

Description

technical field [0001] The invention relates to a method for manufacturing a composition containing indium alkoxide and tin alkoxide, in particular to an indium-containing alcohol suitable for preparing indium tin oxide (indium tin oxide, ITO) thin films by coating A method for producing a composition of salt and tin alkoxide, and a composition containing indium alkoxide and tin alkoxide prepared by the method. Background technique [0002] Indium tin oxide (ITO) is tin-doped indium oxide, which can be In 2 o 3 : Sn means that ITO can be made into a p-type or n-type semiconductor by doping with different impurities. ITO is a metal oxide film with high transparency and high conductivity, and its main component is In 2 o 3 , while In 2 o 3 The structure itself is easy to lose oxygen and form oxygen vacancies, so there are many oxygen vacancies in the process of preparing ITO thin films, and these oxygen vacancies replace the original O 2- The positions, when the oxygen ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C03C17/23
Inventor 林荣显陈奕宏
Owner NAT KAOHSIUNG UNIV OF SCI & TECH
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