Method for enhancing reliability of SONOS (Silicon Oxide Nitride Oxide Semiconductor) flash memory device by means of selective epitaxy

A flash memory device, a selective technology, applied in the direction of electrical solid-state devices, semiconductor devices, semiconductor/solid-state device manufacturing, etc., can solve the problems of increasing device performance instability, reducing device reliability life, silicon surface damage, etc., to achieve reliable Increased performance life, improved reliability, and ease of integration
CN102117779BActive Publication Date: 2013-03-13SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
Publication Date
2013-03-13

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Abstract

The invention discloses a method for enhancing the reliability of an SONOS (Silicon Oxide Nitride Oxide Semiconductor) flash memory device by means of selective epitaxy, which comprises the following steps: step 1, growing an epitaxial doping layer on a silicon substrate by adopting a selective epitaxial process; step 2, growing a tunneling oxidation layer on the epitaxial doping layer; step 3, growing a silicon oxynitride trap layer on the tunneling oxidation layer, and simultaneously carrying out in-situ doping on the silicon oxynitride trap layer by using N2O to form a silicon oxynitride mixture to serve as a medium for storing charges; and step 4, growing a high-temperature thermal-oxidation layer on the silicon oxynitride trap layer. In the method disclosed by the invention, an erasing voltage is regulated by means of selective epitaxial doping growth instead of ion implantation so as to avoid the damage to a silicon surface, thus the reliability of the SONOS flash memory device is improved and the service life of the SONOS flash memory device is prolonged.
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Description

technical field

[0001] The invention belongs to the field of semiconductor integrated circuit manufacturing, and relates to a manufacturing process method of a SONOS flash memory device, in particular to a method for improving the reliability of the SONOS flash memory device by using selective epitaxy. Background technique

[0002] SONOS flash memory device (a flash memory device using silicon nitride as a charge storage medium) has become one of the main flash memory types at present because of its good scaling characteristics and radiation resistance characteristics. SONOS flash memory devices are also facing many problems in application. Among them, there are two main issues related to reliability: one is Endurance (endurance) characteristics, which is to measure the degradation of SONOS device characteristics after multiple programming / erasing. The second is the Data Retention (data retention) feature, which is the data storage capability of SONOS devices. Since the ad...

Claims

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