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Method for manufacturing glass sealed diode by adopting metallurgy bonding method

A technology of glass-sealed diodes and diodes, which is used in semiconductor/solid-state device manufacturing, electrical components, and electro-solid devices, etc., can solve hidden dangers, chip electrode extraction problems, etc. High stability effect

Active Publication Date: 2012-10-24
朝阳微电子科技股份有限公司
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  • Summary
  • Abstract
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  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage of this crimping process is that there are certain hidden dangers in the lead-out of the electrodes of the chip, and open circuits will occur in severe cases.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] In the present invention, the substrate material of the glass-encapsulated diode chip is silicon epitaxial wafer (N type), the resistivity ρ=0.6Ω.cm , and the glass-encapsulated diode chip is first made, and the chip size: 0.5mm×0.5mm

[0019] Select DO-35 glass bulb with inner diameter φ0.76mm,

[0020] Soldering piece is φ0.7mm, thickness 0.05mm

[0021] According to the conventional process, the glass sealing temperature is 600°C, and the metallurgical bonding temperature is 650°C for 5 minutes.

[0022] According to the process, the glass-encapsulated Zener tube ZW60 has a breakdown voltage of VB=11.5-12V, and all curves are hard breakdown V .

[0023] The glass-encapsulated diode chip manufactured by the process in this embodiment has good connection reliability.

[0024] The invention does not have high requirements on materials, and can realize metallurgical bonding and packaging of all glass-sealed diodes. The raw materials used in the present invention are a...

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Abstract

The invention discloses a method for manufacturing a glass sealed diode by adopting a metallurgy bonding method. An internal lead wire of a diode and a chip of the diode realize the electric signal connection between the chip and an external lead wire by adopting the metallurgy bonding method. By the method, the metallurgy bonding of the internal lead wire and a chip electrode is realized so thatthe electric signal connection between the chip and the external lead wire is realized. The glass sealed diode produced by the method has high reliability and can be applied to various severe environmental conditions without the problems of open circuit or failure.

Description

technical field [0001] The invention relates to a method for manufacturing a glass-sealed diode by adopting a metallurgical bonding process, and belongs to the technical field of semiconductor device processing. Background technique [0002] The main characteristic of diodes is unidirectional conductivity, that is, under the action of forward voltage, the on-resistance is very small; while under the action of reverse voltage, the on-resistance is extremely large or small. Because the diode has the above characteristics, it is often used for rectification and voltage regulation in the circuit. [0003] The characteristic of the Zener diode is that after the reverse voltage is applied, the voltage across it remains basically unchanged. The rectifier diode is damaged after reverse breakdown. In this way, when the voltage regulator tube is connected to the circuit, if the voltage of each point in the circuit fluctuates due to fluctuations in the power supply voltage or other r...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/329H01L21/60
CPCH01L2924/0002
Inventor 李志福
Owner 朝阳微电子科技股份有限公司
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